Observation of weak carrier localization in green emitting InGaN/GaN multi-quantum well structure

Journal Article · Tue Apr 14 04:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4917217· OSTI ID:22402846

Mohanta, Antaryami; Wang, Shiang-Fu; Jang, Der-Jun ^[1]; Young, Tai-Fa ^[2]; Yeh, Ping-Hung; Ling, Dah-Chin ^[3]; Lee, Meng-En ^[4]

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1. Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan (China)
2. Department of Mechanical and Electromechanical Engineering, National Sun Yat-sen University, Kaohsiung 80424, Taiwan (China)
3. Department of Physics, Tamkang University, Tamsui Dist., New Taipei City 25137, Taiwan (China)
4. Department of Physics, National Kaohsiung Normal University, Kaohsiung 80264, Taiwan (China)

Green emitting InGaN/GaN multi-quantum well samples were investigated using transmission electron microscopy, photoluminescence (PL), and time-resolved photoluminescence (TRPL) spectroscopy. Weak carrier localization with characteristic energy of ∼12 meV due to an inhomogeneous distribution of In in the InGaN quantum (QW) layer is observed. The temperature dependence of the PL peak energy exhibits S-shape phenomenon and is comparatively discussed within the framework of the Varshni's empirical formula. The full width at half maximum of the PL emission band shows an increasing-decreasing-increasing behavior with increasing temperature arising from the localized states caused by potential fluctuations. The radiative life time, τ{sub r}, extracted from the TRPL profile shows ∼T{sup 3/2} dependence on temperature above 200 K, which confirms the absence of the effect of carrier localization at room temperature.

• OSTI ID: 22402846
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 14 Vol. 117; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
EMISSION SPECTROSCOPY
FLUCTUATIONS
GALLIUM NITRIDES
HETEROJUNCTIONS
INDIUM NITRIDES
LAYERS
PHOTOLUMINESCENCE
POTENTIALS
QUANTUM WELLS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
TIME RESOLUTION
TRANSMISSION ELECTRON MICROSCOPY