Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells

Journal Article · Fri Feb 28 04:00:00 EST 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4866815· OSTI ID:22277979

Li, Zhi; Kang, Junjie; Li, Hongjian; Liu, Zhiqiang; Yi, Xiaoyan; Wang, Guohong ^[1]; Wei Wang, Bo; Chuan Feng, Zhe ^[2]; Hsiang Weng, Yu; Lee, Yueh-Chien ^[3]

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1. Semiconductor Lighting R and D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
2. Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan (China)
3. Department of Electronic Engineering, Tungnan University, Taipei 22202, Taiwan (China)

The effect of carrier localization in InGaN/GaN multiple quantum wells (MQWs) light-emitting diodes is investigated by photoluminescence (PL) and time-resolved PL (TRPL) measurements. PL results show that two peaks obtained by Gaussian fitting both relate to the emission from localized states. By fitting the TRPL lifetimes at various emission energies, two localization depths corresponding to the In-rich regions and quasi-MQWs regions are obtained. Using a model we proposed, we suggest that compositional fluctuations of In content and variation of well width are responsible for carrier localization in In-rich regions and quasi-MQWs regions, respectively.

• OSTI ID: 22277979
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 115; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
CHARGE CARRIERS
FLUCTUATIONS
GALLIUM NITRIDES
HETEROJUNCTIONS
INDIUM COMPOUNDS
INTERFACES
LIFETIME
LIGHT EMITTING DIODES
PHOTOLUMINESCENCE
QUANTUM WELLS
TIME RESOLUTION