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Amber light-emitting diode comprising a group III-nitride nanowire active region

Patent ·
OSTI ID:1149612
; ; ;

A temperature stable (color and efficiency) III-nitride based amber (585 nm) light-emitting diode is based on a novel hybrid nanowire-planar structure. The arrays of GaN nanowires enable radial InGaN/GaN quantum well LED structures with high indium content and high material quality. The high efficiency and temperature stable direct yellow and red phosphor-free emitters enable high efficiency white LEDs based on the RGYB color-mixing approach.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
8,785,905
Application Number:
13/743,438
OSTI ID:
1149612
Country of Publication:
United States
Language:
English

References (6)

Dislocation density reduction in GaN by dislocation filtering through a self-assembled monolayer of silica microspheres journal June 2009
Strain influenced indium composition distribution in GaN/InGaN core-shell nanowires journal November 2010
GaN-based light emitting diodes with embedded SiO2 pillars and air gap array structures journal August 2010
Impact of two-floor air prism arrays as an embedded reflector for enhancing the output power of InGaN/GaN light emitting diodes journal November 2009
Complete composition tunability of InGaN nanowires using a combinatorial approach journal October 2007
High-efficiency light-emitting diode with air voids embedded in lateral epitaxially overgrown GaN using a metal mask journal January 2011

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32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION