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Carbon-rich hexagonal (BN)C alloys

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4921931· OSTI ID:22412901
Thin films of hexagonal boron nitride carbon, h-(BN){sub 1−x}(C{sub 2}){sub x}, alloys in the C-rich side have been synthesized by metal-organic chemical vapor deposition (MOCVD) on c-plane sapphire substrates. X-ray diffraction measurements confirmed single hexagonal phase of h-(BN){sub 1−x}(C{sub 2}){sub x} epilayers. Electrical transport and Raman spectroscopy measurements results revealed evidences that homogenous h-(BN){sub 1−x}(C{sub 2}){sub x} alloys with x ≥ 95% can be synthesized by MOCVD at a growth temperature of 1300 °C. The variable temperature Hall-effect measurements suggested that a bandgap opening of about 93 meV with respect to graphite has been obtained for h-(BN){sub 1−x}(C{sub 2}){sub x} with x = 0.95, which is consistent with the expected value deduced from the alloy dependence of the energy gap of homogenous h-(BN){sub 1−x}(C{sub 2}){sub x} alloys. Atomic composition results obtained from x-ray photoelectron spectroscopy measurements revealed that the carrier type in C-rich h-(BN){sub 1−x}(C{sub 2}){sub x} alloys is controlled by the stoichiometry ratio between the B and N via changing the V/III ratio during the growth. The demonstration of bandgap opening and conductivity control in C-rich h-(BN){sub 1−x}(C{sub 2}){sub x} alloys provide feasibilities for realizing technologically significant devices including infrared (IR) emitters and detectors active from near to far IR and multi-spectral IR emitters and detectors.
OSTI ID:
22412901
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 21 Vol. 117; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English