Electrical transport properties of (BN)-rich hexagonal (BN)C semiconductor alloys

Journal Article · Fri Aug 15 04:00:00 EDT 2014 · AIP Advances

DOI:https://doi.org/10.1063/1.4894451· OSTI ID:22299762

Uddin, M. R.; Doan, T. C.; Li, J.; Lin, J. Y.; Ziemer, K. S. ^[1]

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1. Department of Chemical Engineering, Northeastern University, Boston, MA 02115 (United States)

The layer structured hexagonal boron nitride carbon semiconductor alloys, h-(BN)C, offer the unique abilities of bandgap engineering (from 0 for graphite to ∼6.4 eV for h-BN) and electrical conductivity control (from semi-metal for graphite to insulator for undoped h-BN) through alloying and have the potential to complement III-nitride wide bandgap semiconductors and carbon based nanostructured materials. Epilayers of (BN)-rich h-(BN){sub 1-x}(C{sub 2}){sub x} alloys were synthesized by metal-organic chemical vapor deposition (MOCVD) on (0001) sapphire substrates. Hall-effect measurements revealed that homogeneous (BN)-rich h-(BN){sub 1-x}(C{sub 2}){sub x} alloys are naturally n-type. For alloys with x = 0.032, an electron mobility of about 20 cm{sup 2}/Vs at 650 °K was measured. X-ray photoelectron spectroscopy (XPS) was used to determine the chemical composition and analyze chemical bonding states. Both composition and chemical bonding analysis confirm the formation of alloys. XPS results indicate that the carbon concentration in the alloys increases almost linearly with the flow rate of the carbon precursor (propane (C{sub 3}H{sub 8})) employed during the epilayer growth. XPS chemical bonding analysis showed that these MOCVD grown alloys possess more C-N bonds than C-B bonds, which possibly renders the undoped h-(BN){sub 1-x}(C{sub 2}){sub x} alloys n-type and corroborates the Hall-effect measurement results.

• OSTI ID: 22299762
• Journal Information: AIP Advances, Journal Name: AIP Advances Journal Issue: 8 Vol. 4; ISSN AAIDBI; ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
ALLOYS
BORON NITRIDES
CHEMICAL BONDS
CHEMICAL VAPOR DEPOSITION
ELECTRIC CONDUCTIVITY
GRAPHITE
HALL EFFECT
NANOSTRUCTURES
PROPANE
SAPPHIRE
SEMICONDUCTOR MATERIALS
X-RAY PHOTOELECTRON SPECTROSCOPY