Hexagonal boron nitride: Epitaxial growth and device applications

Maity, A.; Grenadier, S. J.; Li, J.; Lin, J. Y.; Jiang, H. X.

doi:10.1016/j.pquantelec.2020.100302

Title: Hexagonal boron nitride: Epitaxial growth and device applications

Journal Article · Thu Nov 05 00:00:00 EST 2020 · Progress in Quantum Electronics

DOI:https://doi.org/10.1016/j.pquantelec.2020.100302· OSTI ID:1848323

Maity, A. ^[1]; Grenadier, S. J. ^[1]; Li, J. ^[1]; Lin, J. Y. ^[1]; Jiang, H. X. ^[1]

Texas Tech Univ., Lubbock, TX (United States). Dept. of Electrical and Computer Engineering

As a newest family member of the III-nitrides, BN is considered amongst the remaining frontiers in wide energy bandgap semiconductors with potentials for technologically significant applications in deep UV (DUV) optoelectronics, solid-state neutron detectors, electron emitters, single photon emitters, switching/memory devices, and super-capacitors. It was shown that it is possible to produce h-BN epilayers with high hexagonal phase purity, UV transparency, and film stoichiometry by employing nitrogen-rich growth conditions. The quasi-2D nature of h-BN supports unusually strong optical transitions near the band edge and a large exciton binding energy on the order of 0.7 eV. Since the isotope of B-10 has a large capture cross-section for thermal neutrons, h-BN is an ideal material for the fabrication of solid-state neutron detectors for special nuclear materials detection, well and geothermal logging, and medical imaging applications. Freestanding B-10 enriched h-BN (h-¹⁰BN) epilayers with varying thicknesses up to 200 μm have been successfully synthesized by metal organic chemical vapor deposition (MOCVD) as of this writing. By utilizing the conductivity anisotropy nature of h-BN, 1 cm² lateral detectors fabricated from 100 μm thick h-10BN epilayers have demonstrated a detection efficiency of 59% for thermal neutrons, which is the highest on record among all solid-state neutron detectors as of today. It was noted that high growth temperatures, long growth times and the use of sapphire substrate tend to incorporate oxygen related impurities into h-¹⁰BN epilayers, which strongly impacted the carrier mobility-lifetime (μτ) products and charge collection efficiencies of h-¹⁰BN neutron detectors. As the h-BN material technology further develops, improved carrier mobilities and μτ products will allow the fabrication of h-BN devices with enhanced performance.

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Research Organization:: Texas Tech Univ., Lubbock, TX (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E); National Science Foundation (NSF); USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AR0000964; AR0001257; FG02-09ER46552; NA0002927; ECCS-1402886; DMR-1206652; 2011-DN077-ARI048

OSTI ID:: 1848323

Alternate ID(s):: OSTI ID: 1809473

Journal Information:: Progress in Quantum Electronics, Vol. 76, Issue C; ISSN 0079-6727

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Title: Hexagonal boron nitride: Epitaxial growth and device applications

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