Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well

Journal Article · Mon Mar 02 04:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4914007· OSTI ID:22412752

Shashkin, A. A.; Dolgopolov, V. T. ^[1]; Huang, S. -H.; Kravchenko, S. V. ^[2]

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1. Institute of Solid State Physics, Chernogolovka, Moscow District 142432 (Russian Federation)
2. Physics Department, Northeastern University, Boston, Massachusetts 02115 (United States)

We report the observation of an electron gas in a SiGe/Si/SiGe quantum well with maximum mobility up to 240 m{sup 2}/Vs, which is noticeably higher than previously reported results in silicon-based structures. Using SiO, rather than Al{sub 2}O{sub 3}, as an insulator, we obtain strongly reduced threshold voltages close to zero. In addition to the predominantly small-angle scattering well known in the high-mobility heterostructures, the observed linear temperature dependence of the conductivity reveals the presence of a short-range random potential.

• OSTI ID: 22412752
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 9 Vol. 106; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM OXIDES
ELECTRIC POTENTIAL
ELECTRON GAS
GERMANIUM SILICIDES
HETEROJUNCTIONS
QUANTUM WELLS
RANDOMNESS
SILICON
SILICON OXIDES
SMALL ANGLE SCATTERING
TEMPERATURE DEPENDENCE
TWO-DIMENSIONAL CALCULATIONS
TWO-DIMENSIONAL SYSTEMS