Scattering mechanisms in shallow undoped Si/SiGe quantum wells

Laroche, D.; Nielsen, E.; Huang, S. -H.; Chuang, Y.; Liu, C. W.

doi:10.1063/1.4933026

Scattering mechanisms in shallow undoped Si/SiGe quantum wells

Journal Article · Thu Oct 15 00:00:00 EDT 2015 · AIP Advances

DOI:https://doi.org/10.1063/1.4933026· OSTI ID:22492121

Laroche, D.; Nielsen, E.; Huang, S. -H.; Chuang, Y.; Liu, C. W. ^[1]

Department of Electrical Engineering and Graduate Institute of Electronic Engineering, National Taiwan University, Taipei 10617, Taiwan, R.O.C. (China)

We report the magneto-transport study and scattering mechanism analysis of a series of increasingly shallow Si/SiGe quantum wells with depth ranging from ∼ 100 nm to ∼ 10 nm away from the heterostructure surface. The peak mobility increases with depth, suggesting that charge centers near the oxide/semiconductor interface are the dominant scattering source. The power-law exponent of the electron mobility versus density curve, μ ∝ n{sup α}, is extracted as a function of the depth of the Si quantum well. At intermediate densities, the power-law dependence is characterized by α ∼ 2.3. At the highest achievable densities in the quantum wells buried at intermediate depth, an exponent α ∼ 5 is observed. We propose and show by simulations that this increase in the mobility dependence on the density can be explained by a non-equilibrium model where trapped electrons smooth out the potential landscape seen by the two-dimensional electron gas.

OSTI ID:: 22492121

Journal Information:: AIP Advances, Journal Name: AIP Advances Journal Issue: 10 Vol. 5; ISSN AAIDBI; ISSN 2158-3226

Country of Publication:: United States

Language:: English

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Scattering mechanisms in shallow undoped Si/SiGe quantum wells

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