Inversion-mode GaAs wave-shaped field-effect transistor on GaAs (100) substrate

Journal Article · Mon Feb 16 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4913431· OSTI ID:22412668

Zhang, Jingyun; Si, Mengwei; Wu, Heng; Lou, Xiabing; Gordon, Roy G. ^[1]; Shao, Jiayi ^[2]; Manfra, Michael J. ^[3]

---

1. Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138 (United States)
2. Department of Physics, Purdue University, West Lafayette, Indiana 47907 (United States)
3. School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States)

Inversion-mode GaAs wave-shaped metal-oxide-semiconductor field-effect transistors (WaveFETs) are demonstrated using atomic-layer epitaxy of La{sub 2}O{sub 3} as gate dielectric on (111)A nano-facets formed on a GaAs (100) substrate. The wave-shaped nano-facets, which are desirable for the device on-state and off-state performance, are realized by lithographic patterning and anisotropic wet etching with optimized geometry. A well-behaved 1 μm gate length GaAs WaveFET shows a maximum drain current of 64 mA/mm, a subthreshold swing of 135 mV/dec, and an I{sub ON}/I{sub OFF} ratio of greater than 10{sup 7}.

• OSTI ID: 22412668
• Journal Information: Applied Physics Letters, Vol. 106, Issue 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANISOTROPY
CRYSTAL STRUCTURE
DIELECTRIC MATERIALS
EPITAXY
ETCHING
GALLIUM ARSENIDES
LANTHANUM OXIDES
LAYERS
MOSFET
PERFORMANCE
SEMICONDUCTOR MATERIALS
SUBSTRATES