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AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) using plasma deposited BN as gate dielectric

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/5.0027885· OSTI ID:1831082
 [1];  [2];  [2];  [2];  [2];  [2];  [2];  [2];  [3];  [2];  [2]
  1. Arizona State Univ., Tempe, AZ (United States); Arizona State University
  2. Arizona State Univ., Tempe, AZ (United States)
  3. Iowa State Univ., Ames, IA (United States)
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AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) were fabricated on Si substrates with a 10 nm boron nitride (BN) layer as a gate dielectric deposited by electron cyclotron resonance microwave plasma chemical vapor deposition. The material characterization of the BN/GaN interface was investigated by X-ray photoelectric spectroscopy (XPS) and UV photoelectron spectroscopy. The BN bandgap from the B1s XPS energy loss is ~5 eV consistent with sp2 bonding. The MISHEMTs exhibit a low off-state current of 1 × 10–8 mA/mm, a high on/off current ratio of 109, a threshold voltage of –2.76 V, a maximum transconductance of 32 mS/mm at a gate voltage of –2.1 V and a drain voltage of 1 V, a subthreshold swing of 69.1 mV/dec, and an on-resistance of 12.75 Ω·mm. The interface state density (Dit) is estimated to be less than 8.49 × 1011 cm–2 eV–1. Gate leakage current mechanisms were investigated by temperature-dependent current–voltage measurements from 300 K to 500 K. The maximum breakdown electric field is no less than 8.4 MV/cm. Poole–Frenkel emission and Fowler–Nordheim tunneling are indicated as the dominant mechanisms of the gate leakage through the BN gate dielectric at low and high electric fields, respectively.

Research Organization:
Arizona State Univ., Tempe, AZ (United States)
Sponsoring Organization:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Grant/Contract Number:
SC0021230; AR0000868
OSTI ID:
1831082
Alternate ID(s):
OSTI ID: 1765933
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 7 Vol. 118; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

References (36)

Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology: Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology journal October 2010
Fabrication and characterization of BN/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors with sputtering-deposited BN gate dielectric: Fabrication and characterization of BN/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors with sputtering-deposited BN ga journal October 2013
Overlayer thickness determination by XPS using the multiline approach: Overlayer thickness determination by XPS using the multiline approach journal December 2008
Characterization of ALCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy journal May 2002
AlGaN/GaN MISHEMT with hBN as gate dielectric journal May 2009
In situ photoelectron spectroscopic characterization of c-BN films deposited via plasma enhanced chemical vapor deposition employing fluorine chemistry journal June 2015
Layered boron nitride enabling high-performance AlGaN/GaN high electron mobility transistor journal July 2020
Boron nitride (BN) and BN composites for high-temperature applications journal January 2008
Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal journal May 2004
Quasi-Two-Dimensional h-BN/β-Ga 2 O 3 Heterostructure Metal–Insulator–Semiconductor Field-Effect Transistor journal June 2017
Nanometre-scale electronics with III–V compound semiconductors journal November 2011
Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk journal March 2018
Synthesis and Characterization of Hexagonal Boron Nitride as a Gate Dielectric journal July 2016
GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric journal February 2005
AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer journal September 2017
Band offsets of epitaxial cubic boron nitride deposited on polycrystalline diamond via plasma-enhanced chemical vapor deposition journal October 2017
High breakdown voltage quasi-two-dimensional β-Ga 2 O 3 field-effect transistors with a boron nitride field plate journal March 2018
Insulated gate and surface passivation structures for GaN-based power transistors journal September 2016
Enhanced device performance of AlGaN/GaN HEMTs using HfO 2 high- k dielectric for surface passivation and gate oxide journal March 2007
DC and microwave performance of AlGaN/GaN HEMTs passivated with sputtered SiN x journal May 2007
The 2018 GaN power electronics roadmap journal March 2018
Light scattering study of boron nitride microcrystals journal June 1981
Optical properties of BN in cubic and layered hexagonal phases journal June 2001
Quantum oscillations in diamond field-effect transistors with a h -BN gate dielectric journal December 2019
Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- k Gate Dielectrics journal March 2010
CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon journal May 2012
High-Performance Current Saturating Graphene Field-Effect Transistor With Hexagonal Boron Nitride Dielectric on Flexible Polymeric Substrates journal February 2013
600-V Normally Off ${\rm SiN}_{x}$/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse journal November 2013
Robust SiNx/AlGaN Interface in GaN HEMTs Passivated by Thick LPCVD-Grown SiNx Layer journal July 2015
Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives journal June 2008
Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs journal October 2015
Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si 3 N 4 as Gate Dielectric and Passivation Layer journal February 2016
A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs journal June 2012
Dry etching techniques for active devices based on hexagonal boron nitride epilayers journal November 2013
Thin Film Applications in Advanced Electron Devices journal January 2014
AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer journal December 2018

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Related Subjects

36 MATERIALS SCIENCE
Ceramic materials
Chemical vaport deposition
Cyclotron resonance
Dielectric materials
Electrical properties and parameters
Field effect transistors
Fowler-Nordheim tunneling
Semiconductors
Transconductance
Ultraviolet photoelectron spectroscopy