High-performance HZO/InAlN/GaN MISHEMTs for Ka-band application

Cui, Peng; Moser, Neil; Chen, Hang; Xiao, John Q.; Chabak, Kelson D.; Zeng, Yuping

doi:10.1088/1361-6641/acb2ea

High-performance HZO/InAlN/GaN MISHEMTs for Ka-band application

Journal Article · Tue Jan 31 23:00:00 EST 2023 · Semiconductor Science and Technology

DOI:https://doi.org/10.1088/1361-6641/acb2ea· OSTI ID:2422245

^[1]; Moser, Neil ^[2]; ^[3]; ^[3]; Chabak, Kelson D. ^[2]; ^[3]

Univ. of Delaware, Newark, DE (United States); OSTI
Air Force Research Lab. (AFRL), Wright-Patterson AFB, OH (United States)
Univ. of Delaware, Newark, DE (United States)

This paper reports on the demonstration of microwave power performance at 30 GHz on InAlN/GaN metal–insulator–semiconductor high electron mobility transistor (MISHEMT) on silicon substrate by using the Hf_0.5Zr_0.5O₂ (HZO) as a gate dielectric. Compared with Schottky gate HEMT, the MISHEMT with a gate length (L_G) of 50 nm presents a significantly enhanced performance with an ON/OFF current ratio (I_ON/I_OFF) of 9.3 × 10⁷, a subthreshold swing of 130 mV dec^-1, a low drain-induced barrier lowing of 45 mV V^-1, and a breakdown voltage of 35 V. RF characterizations reveal a current gain cutoff frequency (f_T) of 155 GHz and a maximum oscillation frequency (f_max) of 250 GHz, resulting in high (f_T × f_max)^1/2 of 197 GHz and the record high Johnson's figure-of-merit (JFOM = f_T × BV) of 5.4 THz V among the reported GaN MISHEMTs on Si. Further, the power performance at 30 GHz exhibits a maximum output power of 1.36 W mm^-1, a maximum power gain of 12.3 dB, and a peak power-added efficiency of 21%, demonstrating the great potential of HZO/InAlN/GaN MISHEMTs for the Ka-band application.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of Arkansas, Fayetteville, AR (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); US Air Force Office of Scientific Research (AFOSR); National Aeronautics and Space Administration (NASA); Energy Frontier Research Centers (EFRC) (United States)

Grant/Contract Number:: SC0023412

OSTI ID:: 2422245

Journal Information:: Semiconductor Science and Technology, Journal Name: Semiconductor Science and Technology Journal Issue: 3 Vol. 38; ISSN 0268-1242

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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