Sub-band transport mechanism and switching properties for resistive switching nonvolatile memories with structure of silver/aluminum oxide/p-type silicon
- School of Physics and Optoelectronic Engineering, Dalian University of Technology, No. 2 Linggong Road, Ganjingzi District, Dalian 116024 (China)
- Department of Microelectronics, State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433 (China)
- Center for Nano Metrology and Manufacturing Technologies and International Joint Research Center for Nanophotonics and Biophotonics, Changchun University of Science and Technology, Changchun 130022 (China)
In this paper, we discuss a model of sub-band in resistive switching nonvolatile memories with a structure of silver/aluminum oxide/p-type silicon (Ag/Al{sub x}O{sub y}/p-Si), in which the sub-band is formed by overlapping of wave functions of electron-occupied oxygen vacancies in Al{sub x}O{sub y} layer deposited by atomic layer deposition technology. The switching processes exhibit the characteristics of the bipolarity, discreteness, and no need of forming process, all of which are discussed deeply based on the model of sub-band. The relationships between the SET voltages and distribution of trap levels are analyzed qualitatively. The semiconductor-like behaviors of ON-state resistance affirm the sub-band transport mechanism instead of the metal filament mechanism.
- OSTI ID:
- 22412630
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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