Resistive switching of aluminum oxide for flexible memory

Journal Article · Mon Jun 02 00:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2939555· OSTI ID:21120781

Kim, Sungho; Choi, Yang-Kyu ^[1]

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1. School of Electrical Engineering and Computer Science, Division of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of)

The unipolar resistive switching of the Al/Al{sub x}O{sub y}/Al structure is investigated for nonvolatile memory. Following the production of aluminum oxide film (Al{sub x}O{sub y}) by plasma oxidation, a high ratio of on-state and off-state currents ({>=}10{sup 4}) is achieved, and characteristics of switching endurance are reported. Due to the good ductility of aluminum, the performance of resistive switching on a flexible substrate is not degraded by severe substrate bending. The low process temperature of the plasma oxidation process is advantageous for the fabrication of flexible electronic devices and modern interconnection processes.

• OSTI ID: 21120781
• Journal Information: Applied Physics Letters, Vol. 92, Issue 22; Other Information: DOI: 10.1063/1.2939555; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM
ALUMINIUM OXIDES
BENDING
DUCTILITY
ELECTRONIC EQUIPMENT
FABRICATION
FILMS
MEMORY DEVICES
OXIDATION
PERFORMANCE
PLASMA
SUBSTRATES
SURFACE TREATMENTS