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Title: Sub-band transport mechanism and switching properties for resistive switching nonvolatile memories with structure of silver/aluminum oxide/p-type silicon

Abstract

In this paper, we discuss a model of sub-band in resistive switching nonvolatile memories with a structure of silver/aluminum oxide/p-type silicon (Ag/Al{sub x}O{sub y}/p-Si), in which the sub-band is formed by overlapping of wave functions of electron-occupied oxygen vacancies in Al{sub x}O{sub y} layer deposited by atomic layer deposition technology. The switching processes exhibit the characteristics of the bipolarity, discreteness, and no need of forming process, all of which are discussed deeply based on the model of sub-band. The relationships between the SET voltages and distribution of trap levels are analyzed qualitatively. The semiconductor-like behaviors of ON-state resistance affirm the sub-band transport mechanism instead of the metal filament mechanism.

Authors:
; ; ; ; ;  [1];  [2]; ;  [3]
  1. School of Physics and Optoelectronic Engineering, Dalian University of Technology, No. 2 Linggong Road, Ganjingzi District, Dalian 116024 (China)
  2. Department of Microelectronics, State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433 (China)
  3. Center for Nano Metrology and Manufacturing Technologies and International Joint Research Center for Nanophotonics and Biophotonics, Changchun University of Science and Technology, Changchun 130022 (China)
Publication Date:
OSTI Identifier:
22412630
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRONS; FILAMENTS; LAYERS; OXYGEN; P-TYPE CONDUCTORS; SILICON; SILVER; TRAPS; VACANCIES

Citation Formats

Liu, Yanhong, Li, La, Wang, Song, Gao, Ping, Pan, Lujun, Zhang, Jialiang, Zhou, Peng, Li, Jinhua, and Weng, Zhankun. Sub-band transport mechanism and switching properties for resistive switching nonvolatile memories with structure of silver/aluminum oxide/p-type silicon. United States: N. p., 2015. Web. doi:10.1063/1.4908540.
Liu, Yanhong, Li, La, Wang, Song, Gao, Ping, Pan, Lujun, Zhang, Jialiang, Zhou, Peng, Li, Jinhua, & Weng, Zhankun. Sub-band transport mechanism and switching properties for resistive switching nonvolatile memories with structure of silver/aluminum oxide/p-type silicon. United States. doi:10.1063/1.4908540.
Liu, Yanhong, Li, La, Wang, Song, Gao, Ping, Pan, Lujun, Zhang, Jialiang, Zhou, Peng, Li, Jinhua, and Weng, Zhankun. Mon . "Sub-band transport mechanism and switching properties for resistive switching nonvolatile memories with structure of silver/aluminum oxide/p-type silicon". United States. doi:10.1063/1.4908540.
@article{osti_22412630,
title = {Sub-band transport mechanism and switching properties for resistive switching nonvolatile memories with structure of silver/aluminum oxide/p-type silicon},
author = {Liu, Yanhong and Li, La and Wang, Song and Gao, Ping and Pan, Lujun and Zhang, Jialiang and Zhou, Peng and Li, Jinhua and Weng, Zhankun},
abstractNote = {In this paper, we discuss a model of sub-band in resistive switching nonvolatile memories with a structure of silver/aluminum oxide/p-type silicon (Ag/Al{sub x}O{sub y}/p-Si), in which the sub-band is formed by overlapping of wave functions of electron-occupied oxygen vacancies in Al{sub x}O{sub y} layer deposited by atomic layer deposition technology. The switching processes exhibit the characteristics of the bipolarity, discreteness, and no need of forming process, all of which are discussed deeply based on the model of sub-band. The relationships between the SET voltages and distribution of trap levels are analyzed qualitatively. The semiconductor-like behaviors of ON-state resistance affirm the sub-band transport mechanism instead of the metal filament mechanism.},
doi = {10.1063/1.4908540},
journal = {Applied Physics Letters},
number = 6,
volume = 106,
place = {United States},
year = {Mon Feb 09 00:00:00 EST 2015},
month = {Mon Feb 09 00:00:00 EST 2015}
}
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