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Title: Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al{sub 0.7}Ga{sub 0.3}N

Abstract

The growth temperature dependence of Si doping efficiency and deep level defect formation was investigated for n-type Al{sub 0.7}Ga{sub 0.3}N. It was observed that dopant compensation was greatly reduced with reduced growth temperature. Deep level optical spectroscopy and lighted capacitance-voltage were used to understand the role of acceptor-like deep level defects on doping efficiency. Deep level defects were observed at 2.34 eV, 3.56 eV, and 4.74 eV below the conduction band minimum. The latter two deep levels were identified as the major compensators because the reduction in their concentrations at reduced growth temperature correlated closely with the concomitant increase in free electron concentration. Possible mechanisms for the strong growth temperature dependence of deep level formation are considered, including thermodynamically driven compensating defect formation that can arise for a semiconductor with very large band gap energy, such as Al{sub 0.7}Ga{sub 0.3}N.

Authors:
; ; ; ;  [1]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
Publication Date:
OSTI Identifier:
22410197
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 117; Journal Issue: 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; CAPACITANCE; CONCENTRATION RATIO; CRYSTAL GROWTH; ELECTRIC POTENTIAL; ELECTRONIC STRUCTURE; ELECTRONS; ENERGY GAP; EV RANGE; GALLIUM NITRIDES; N-TYPE CONDUCTORS; SILICON; TEMPERATURE DEPENDENCE; VISIBLE RADIATION

Citation Formats

Armstrong, Andrew M., E-mail: aarmstr@sandia.gov, Moseley, Michael W., Allerman, Andrew A., Crawford, Mary H., and Wierer, Jonathan J. Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al{sub 0.7}Ga{sub 0.3}N. United States: N. p., 2015. Web. doi:10.1063/1.4920926.
Armstrong, Andrew M., E-mail: aarmstr@sandia.gov, Moseley, Michael W., Allerman, Andrew A., Crawford, Mary H., & Wierer, Jonathan J. Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al{sub 0.7}Ga{sub 0.3}N. United States. doi:10.1063/1.4920926.
Armstrong, Andrew M., E-mail: aarmstr@sandia.gov, Moseley, Michael W., Allerman, Andrew A., Crawford, Mary H., and Wierer, Jonathan J. Thu . "Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al{sub 0.7}Ga{sub 0.3}N". United States. doi:10.1063/1.4920926.
@article{osti_22410197,
title = {Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al{sub 0.7}Ga{sub 0.3}N},
author = {Armstrong, Andrew M., E-mail: aarmstr@sandia.gov and Moseley, Michael W. and Allerman, Andrew A. and Crawford, Mary H. and Wierer, Jonathan J.},
abstractNote = {The growth temperature dependence of Si doping efficiency and deep level defect formation was investigated for n-type Al{sub 0.7}Ga{sub 0.3}N. It was observed that dopant compensation was greatly reduced with reduced growth temperature. Deep level optical spectroscopy and lighted capacitance-voltage were used to understand the role of acceptor-like deep level defects on doping efficiency. Deep level defects were observed at 2.34 eV, 3.56 eV, and 4.74 eV below the conduction band minimum. The latter two deep levels were identified as the major compensators because the reduction in their concentrations at reduced growth temperature correlated closely with the concomitant increase in free electron concentration. Possible mechanisms for the strong growth temperature dependence of deep level formation are considered, including thermodynamically driven compensating defect formation that can arise for a semiconductor with very large band gap energy, such as Al{sub 0.7}Ga{sub 0.3}N.},
doi = {10.1063/1.4920926},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 18,
volume = 117,
place = {United States},
year = {2015},
month = {5}
}