Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al{sub 0.7}Ga{sub 0.3}N

Moseley, Michael W.; Allerman, Andrew A.; Crawford, Mary H.; Wierer, Jonathan J.

doi:10.1063/1.4920926

Title: Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al{sub 0.7}Ga{sub 0.3}N

Journal Article · Thu May 14 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4920926· OSTI ID:22410197

Moseley, Michael W.; Allerman, Andrew A.; Crawford, Mary H.; Wierer, Jonathan J. ^[1]

Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

The growth temperature dependence of Si doping efficiency and deep level defect formation was investigated for n-type Al{sub 0.7}Ga{sub 0.3}N. It was observed that dopant compensation was greatly reduced with reduced growth temperature. Deep level optical spectroscopy and lighted capacitance-voltage were used to understand the role of acceptor-like deep level defects on doping efficiency. Deep level defects were observed at 2.34 eV, 3.56 eV, and 4.74 eV below the conduction band minimum. The latter two deep levels were identified as the major compensators because the reduction in their concentrations at reduced growth temperature correlated closely with the concomitant increase in free electron concentration. Possible mechanisms for the strong growth temperature dependence of deep level formation are considered, including thermodynamically driven compensating defect formation that can arise for a semiconductor with very large band gap energy, such as Al{sub 0.7}Ga{sub 0.3}N.

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OSTI ID:: 22410197

Journal Information:: Journal of Applied Physics, Vol. 117, Issue 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979

Country of Publication:: United States

Language:: English

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