Growth Temperature Dependence of Si Doping Efficiency and Compensating Deep Level Defect Incorporation in Al0.7Ga0.3N

Armstrong, Andrew; Moseley, Michael William; Allerman, Andrew A.; Crawford, Mary H.; Wierer, Jonathan

doi:10.1063/1.4920926

Growth Temperature Dependence of Si Doping Efficiency and Compensating Deep Level Defect Incorporation in Al_0.7Ga_0.3N

Journal Article · Mon May 11 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4920926· OSTI ID:1235270

Armstrong, Andrew ^[1]; Moseley, Michael William ^[1]; Allerman, Andrew A. ^[1]; Crawford, Mary H. ^[1]; Wierer, Jonathan ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

The growth temperature dependence of Si doping efficiency and deep level defect formation was investigated for n-type Al_0.7Ga_0.3N. It was observed that dopant compensation was greatly reduced with reduced growth temperature. Furthermore, deep level optical spectroscopy and lighted capacitance-voltage were used to understand the role of acceptor-like deep level defects on doping efficiency. Deep level defects were observed at 2.34 eV, 3.56 eV, and 4.74 eV below the conduction band minimum. The latter two deep levels were identified as the major compensators because the reduction in their concentrations at reduced growth temperature correlated closely with the concomitant increase in free electron concentration. Possible mechanisms for the strong growth temperature dependence of deep level formation are considered, which includes thermodynamically driven compensating defect formation that can arise for a semiconductor with very large band gap energy, such as Al_0.7Ga_0.3N.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1235270

Alternate ID(s):: OSTI ID: 1421111
OSTI ID: 22410197

Report Number(s):: SAND2015--4124J; 588231

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 18 Vol. 117; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited By (3)

n-Type conductivity bound by the growth temperature: the case of Al _0.72 Ga _0.28 N highly doped by silicon Kakanakova-Georgieva, A.; Sahonta, S. -L.; Nilsson, D. Journal of Materials Chemistry C, Vol. 4, Issue 35 https://doi.org/10.1039/c6tc02825j	journal	January 2016
Impact of deep level defects induced by high energy neutron radiation in β-Ga ₂ O ₃ Farzana, Esmat; Chaiken, Max F.; Blue, Thomas E. APL Materials, Vol. 7, Issue 2 https://doi.org/10.1063/1.5054606	journal	February 2019
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