skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Calculation of the electron spin relaxation times in InSb and InAs by the projection-reduction method

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4903062· OSTI ID:22402724
 [1]
  1. Department of Nanomechatronics Engineering, Pusan National University, Miryang 627-706 (Korea, Republic of)

The electron spin relaxation times in a system of electrons interacting with piezoelectric phonons mediated through spin-orbit interactions were calculated using the formula derived from the projection-reduction method. The results showed that the temperature and magnetic field dependence of the relaxation times in InSb and InAs were similar. The piezoelectric material constants obtained by a comparison with the reported experimental result were P{sub pe}=4.0×10{sup 22} eV/m for InSb and P{sub pe}=1.2×10{sup 23} eV/m for InAs. The result also showed that the relaxation of the electron spin by the Elliot-Yafet process is more relevant for InSb than InAs at a low density.

OSTI ID:
22402724
Journal Information:
Journal of Applied Physics, Vol. 116, Issue 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English

Similar Records

Theoretical studies on the dispersion of the nonlinear optical susceptibilities in GaAs, InAs, and InSb
Journal Article · Mon Sep 01 00:00:00 EDT 1975 · Physical Review, B: Solid State · OSTI ID:22402724

Mapping of axial strain in InAs/InSb heterostructured nanowires
Journal Article · Mon Aug 31 00:00:00 EDT 2015 · Applied Physics Letters · OSTI ID:22402724

Spin-phonon relaxation times in centrosymmetric materials from first principles
Journal Article · Mon Jan 13 00:00:00 EST 2020 · Physical Review B · OSTI ID:22402724