Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Calculation of the electron spin relaxation times in InSb and InAs by the projection-reduction method

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4903062· OSTI ID:22402724

The electron spin relaxation times in a system of electrons interacting with piezoelectric phonons mediated through spin-orbit interactions were calculated using the formula derived from the projection-reduction method. The results showed that the temperature and magnetic field dependence of the relaxation times in InSb and InAs were similar. The piezoelectric material constants obtained by a comparison with the reported experimental result were P{sub pe}=4.0×10{sup 22} eV/m for InSb and P{sub pe}=1.2×10{sup 23} eV/m for InAs. The result also showed that the relaxation of the electron spin by the Elliot-Yafet process is more relevant for InSb than InAs at a low density.

OSTI ID:
22402724
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 21 Vol. 116; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English

Similar Records

Mapping of axial strain in InAs/InSb heterostructured nanowires
Journal Article · Mon Aug 31 00:00:00 EDT 2015 · Applied Physics Letters · OSTI ID:22489207

Specific features of the epitaxial growth of narrow-gap InSb quantum dots on an InAs substrate
Journal Article · Sat Aug 15 00:00:00 EDT 2009 · Semiconductors · OSTI ID:21260298

Electron and Hole Spin Relaxation in InAs Quantum Dots and Quasi-2D Structure
Journal Article · Thu Dec 22 23:00:00 EST 2011 · AIP Conference Proceedings · OSTI ID:21612435