Electron and Hole Spin Relaxation in InAs Quantum Dots and Quasi-2D Structure
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijng 100083 (China)
Temperature dependence of hole and electron spin relaxation times in both InAs quantum dots (QDs) and quasi-two-dimensional (2D) monolayers has been investigated experimentally using time-resolved photoluminescence (TRPL). The results show that hole spin relaxation time is long enough to be comparable with that of electrons in the quasi-2D InAs structure, but is one order of magnitude smaller than the electron spin relaxation time in QDs structure. It is shown that both hole and electron spin relaxation times decrease monotonically with increasing temperature for InAs QDs, but show non-monotonic temperature-dependent behavior for the quasi-2D structure. Different spin relaxation mechanisms responsible for spin relaxation in the two structures have been discussed.
- OSTI ID:
- 21612435
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1399; ISSN APCPCS; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
Similar Records
Optical detection of asymmetric quantum-dot molecules in double-layer InAs/GaAs structures
Photoluminescence Study of Interdot Carrier Transfer on Strain-relaxed InAs Quantum Dots
Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ANGULAR MOMENTUM
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
ELECTRONS
ELEMENTARY PARTICLES
EMISSION
EPITAXY
FERMIONS
HOLES
INDIUM ARSENIDES
INDIUM COMPOUNDS
LEPTONS
LUMINESCENCE
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
PARTICLE PROPERTIES
PHOTOLUMINESCENCE
PHOTON EMISSION
PNICTIDES
POLARIZATION
QUANTUM DOTS
RELAXATION
RELAXATION TIME
RESOLUTION
SPIN
TEMPERATURE DEPENDENCE
TEMPERATURE MEASUREMENT
TIME RESOLUTION
TIMING PROPERTIES