Photoluminescence Study of Interdot Carrier Transfer on Strain-relaxed InAs Quantum Dots
Journal Article
·
· AIP Conference Proceedings
- Department of Electrophysics, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30050, Taiwan (China)
- Department of Materials Science and Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30050, Taiwan (China)
Photoluminescence (PL) properties of the strain relaxed InAs quantum dots (QDs) are studied as a function of temperature from 10 to 300 K. Two groups of QDs induced by strain relaxation are observed in the PL spectra. The PL peak position of the relaxed (non-relaxed) QDs locates at a higher (lower) energy. TEM image prove QDs are distributed into two groups and indicate the QDs relax the strain by diffusing indium to GaAs. In the 120-200 K temperature range, there are abnormal temperature behaviors attributed to the carrier transfer from the relaxed to non-relaxed QDs.
- OSTI ID:
- 21612413
- Journal Information:
- AIP Conference Proceedings, Vol. 1399, Issue 1; Conference: 30. international conference on the physics of semiconductors, Seoul (Korea, Republic of), 25-30 Jul 2010; Other Information: DOI: 10.1063/1.3666480; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
CHARGE CARRIERS
CRYSTAL GROWTH
EMISSION SPECTRA
GALLIUM ARSENIDES
INDIUM ARSENIDES
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
QUANTUM DOTS
RELAXATION
STRAINS
TEMPERATURE DEPENDENCE
TEMPERATURE MEASUREMENT
TRANSMISSION ELECTRON MICROSCOPY
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH METHODS
ELECTRON MICROSCOPY
EMISSION
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LUMINESCENCE
MICROSCOPY
NANOSTRUCTURES
PHOTON EMISSION
PNICTIDES
SPECTRA
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
CHARGE CARRIERS
CRYSTAL GROWTH
EMISSION SPECTRA
GALLIUM ARSENIDES
INDIUM ARSENIDES
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
QUANTUM DOTS
RELAXATION
STRAINS
TEMPERATURE DEPENDENCE
TEMPERATURE MEASUREMENT
TRANSMISSION ELECTRON MICROSCOPY
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH METHODS
ELECTRON MICROSCOPY
EMISSION
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LUMINESCENCE
MICROSCOPY
NANOSTRUCTURES
PHOTON EMISSION
PNICTIDES
SPECTRA