Photoluminescence Study of Interdot Carrier Transfer on Strain-relaxed InAs Quantum Dots

Journal Article · Fri Dec 23 04:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3666480· OSTI ID:21612413

Chiang, Chen-Hao; Chang, You-Cheng; Hsieh, Meng-Chien; Yang, Cheng-Hong; Wang, Jia-Feng; Chen, Jenn-Fang ^[1]; Wu, Yue-Han; Chang, Li ^[2]

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1. Department of Electrophysics, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30050, Taiwan (China)
2. Department of Materials Science and Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30050, Taiwan (China)

Photoluminescence (PL) properties of the strain relaxed InAs quantum dots (QDs) are studied as a function of temperature from 10 to 300 K. Two groups of QDs induced by strain relaxation are observed in the PL spectra. The PL peak position of the relaxed (non-relaxed) QDs locates at a higher (lower) energy. TEM image prove QDs are distributed into two groups and indicate the QDs relax the strain by diffusing indium to GaAs. In the 120-200 K temperature range, there are abnormal temperature behaviors attributed to the carrier transfer from the relaxed to non-relaxed QDs.

• OSTI ID: 21612413
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1399; ISSN 0094-243X; ISSN APCPCS
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ARSENIC COMPOUNDS
ARSENIDES
CHARGE CARRIERS
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
ELECTRON MICROSCOPY
EMISSION
EMISSION SPECTRA
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LUMINESCENCE
MICROSCOPY
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
PHOTOLUMINESCENCE
PHOTON EMISSION
PNICTIDES
QUANTUM DOTS
RELAXATION
SPECTRA
STRAINS
TEMPERATURE DEPENDENCE
TEMPERATURE MEASUREMENT
TRANSMISSION ELECTRON MICROSCOPY