Contact resistance improvement by the modulation of peripheral length to area ratio of graphene contact pattern
- Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, 123 Chemdan-gwagiro, Buk-gu, Gwangju 500-712 (Korea, Republic of)
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 123 Chemdan-gwagiro, Buk-gu, Gwangju 500-712 (Korea, Republic of)
- Korea Atomic Energy Research Institute, Advanced Radiation Technology Institute, 29, Geumgu-Gil, Jeongeup-Si, Jeollabuk-Do 580-185 (Korea, Republic of)
High contact resistance between graphene and metal is a major huddle for high performance electronic device applications of graphene. In this work, a method to improve the contact resistance of graphene is investigated by varying the ratio of peripheral length and area of graphene pattern under a metal contact. The contact resistance decreased to 0.8 kΩ·μm from 2.1 kΩ·μm as the peripheral length increased from 312 to 792 μm. This improvement is attributed to the low resistivity of edge-contacted graphene, which is 8.1 × 10{sup 5} times lower than that of top-contacted graphene.
- OSTI ID:
- 22402503
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Modulation of contact resistance between metal and graphene by controlling the graphene edge, contact area, and point defects: An ab initio study
UV Ozone Treatment for Improving Contact Resistance on Graphene
Achieving clean epitaxial graphene surfaces suitable for device applications by improved lithographic process
Journal Article
·
Wed May 14 00:00:00 EDT 2014
· Journal of Applied Physics
·
OSTI ID:22402503
+3 more
UV Ozone Treatment for Improving Contact Resistance on Graphene
Journal Article
·
Sun Jan 01 00:00:00 EST 2012
· Journal of Vacuum Science & Technology B
·
OSTI ID:22402503
+4 more
Achieving clean epitaxial graphene surfaces suitable for device applications by improved lithographic process
Journal Article
·
Mon Jun 02 00:00:00 EDT 2014
· Applied Physics Letters
·
OSTI ID:22402503
+8 more