Achieving clean epitaxial graphene surfaces suitable for device applications by improved lithographic process

Journal Article · Mon Jun 02 04:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4880937· OSTI ID:22300110

Rao, M. V. ^[1]; Koehler, A. D.; Jernigan, G. G.; Wheeler, V. D.; Hite, J. K.; Hernández, S. C.; Robinson, Z. R.; Myers-Ward, R. L.; Eddy, C. R.; Gaskill, D. K. ^[2]; Garces, N. Y. ^[3]

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1. George Mason University, 4400 University Dr., Fairfax, Virginia 22030 (United States)
2. U.S. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, D.C. 20375 (United States)
3. Sotera Defense Solutions, 2200 Defense Hwy. Suite 405, Crofton, Maryland 21114 (United States)

It is well-known that the performance of graphene electronic devices is often limited by extrinsic scattering related to resist residue from transfer, lithography, and other processes. Here, we report a polymer-assisted fabrication procedure that produces a clean graphene surface following device fabrication by a standard lithography process. The effectiveness of this improved lithography process is demonstrated by examining the temperature dependence of epitaxial graphene-metal contact resistance using the transfer length method for Ti/Au (10 nm/50 nm) metallization. The Landauer-Buttiker model was used to explain carrier transport at the graphene-metal interface as a function of temperature. At room temperature, a contact resistance of 140 Ω-μm was obtained after a thermal anneal at 523 K for 2 hr under vacuum, which is comparable to state-of-the-art values.

• OSTI ID: 22300110
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ANNEALING
CARRIERS
ELECTRONIC EQUIPMENT
EPITAXY
GRAPHENE
INTERFACES
METALS
POLYMERS
SCATTERING
SURFACES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K