Defect state passivation at III-V oxide interfaces for complementary metal–oxide–semiconductor devices

Journal Article · Sat Mar 21 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4913832· OSTI ID:22399287

Robertson, J.; Guo, Y.; Lin, L. ^[1]

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1. Department of Engineering, Cambridge University, Cambridge CB2 1PZ (United Kingdom)

The paper describes the reasons for the greater difficulty in the passivation of interface defects of III–V semiconductors like GaAs. These include the more complex reconstructions of the starting surface which already possess defect configurations, the possibility of injecting As antisites into the substrate which give rise to gap states, and the need to avoid As-As bonds and As dangling bonds which give rise to gap states. The nature of likely defect configurations in terms of their electronic structure is described. The benefits of diffusion barriers and surface nitridation are discussed.

• OSTI ID: 22399287
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 11 Vol. 117; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHEMICAL BONDS
CRYSTAL DEFECTS
DIFFUSION BARRIERS
ELECTRONIC STRUCTURE
ENERGY GAP
GALLIUM ARSENIDES
INTERFACES
METALS
NITRIDATION
OXIDES
PASSIVATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SUBSTRATES
SURFACES