Enhanced third harmonic generation from the epsilon-near-zero modes of ultrathin films

Liu, Sheng; Campione, Salvatore; Ceglia, Domenico de; Vincenti, Maria A.; Keeler, Gordon A.; Sinclair, Michael B.; Prasankumar, Rohit P.; Scalora, Michael

doi:10.1063/1.4917457

Enhanced third harmonic generation from the epsilon-near-zero modes of ultrathin films

Journal Article · Mon Apr 13 04:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4917457· OSTI ID:22398884

Liu, Sheng; Campione, Salvatore ^[1]; Ceglia, Domenico de; Vincenti, Maria A. ^[2]; Keeler, Gordon A.; Sinclair, Michael B. ^[1]; Prasankumar, Rohit P. ^[1]; Scalora, Michael ^[3]

Sandia National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185 (United States)
National Research Council–AMRDEC, Charles M. Bowden Research Laboratory, Redstone Arsenal, Alabama 35898 (United States)
Charles M. Bowden Research Laboratory, AMRDEC, U.S. Army RDECOM, Redstone Arsenal, Alabama 35898 (United States)

We experimentally demonstrate efficient third harmonic generation from an indium tin oxide nanofilm (λ/42 thick) on a glass substrate for a pump wavelength of 1.4 μm. A conversion efficiency of 3.3 × 10{sup −6} is achieved by exploiting the field enhancement properties of the epsilon-near-zero mode with an enhancement factor of 200. This nanoscale frequency conversion method is applicable to other plasmonic materials and reststrahlen materials in proximity of the longitudinal optical phonon frequencies.

OSTI ID:: 22398884

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 106; ISSN APPLAB; ISSN 0003-6951

Country of Publication:: United States

Language:: English

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