Enhanced third harmonic generation from the epsilon-near-zero modes of ultrathin films
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- National Research Council (AMRDEC), Redstone Arsenal, AL (United States)
We demonstrate, through our experimentation, efficient third harmonic generation from an indium tin oxide nanofilm (λ/42 thick) on a glass substrate for a pump wavelength of 1.4 μm. A conversion efficiency of 3.3 × 10-6 is achieved by exploiting the field enhancement properties of the epsilon-near-zero mode with an enhancement factor of 200. Furthermore, this nanoscale frequency conversion method is applicable to other plasmonic materials and reststrahlen materials in proximity of the longitudinal optical phonon frequencies.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1235265
- Alternate ID(s):
- OSTI ID: 1420548
OSTI ID: 22398884
- Report Number(s):
- SAND2015--8183J; 604116
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 106; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Similar Records
Enhanced third harmonic generation from the epsilon-near-zero modes of ultrathin films
Photon energy conversion by near-zero permittivity nonlinear materials
Journal Article
·
Mon Apr 13 00:00:00 EDT 2015
· Applied Physics Letters
·
OSTI ID:22398884
Photon energy conversion by near-zero permittivity nonlinear materials
Patent
·
Mon Dec 18 23:00:00 EST 2017
·
OSTI ID:1414408