Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure

Journal Article · Mon Apr 06 04:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4917296· OSTI ID:22398872

Laroche, D.; Nielsen, E.; Huang, S. -H.; Liu, C. W.

We report the design, the fabrication, and the magneto-transport study of an electron bilayer system embedded in an undoped Si/SiGe double-quantum-well heterostructure. Combined Hall densities (n{sub Hall}) ranging from 2.6 × 10{sup 10} cm{sup −2} to 2.7 × 10{sup 11} cm{sup −2} were achieved, yielding a maximal combined Hall mobility (μ{sub Hall}) of 7.7 × 10{sup 5} cm{sup 2}/(V ⋅ s) at the highest density. Simultaneous electron population of both quantum wells is clearly observed through a Hall mobility drop as the Hall density is increased to n{sub Hall} > 3.3 × 10{sup 10} cm{sup −2}, consistent with Schrödinger-Poisson simulations. The integer and fractional quantum Hall effects are observed in the device, and single-layer behavior is observed when both layers have comparable densities, either due to spontaneous interlayer coherence or to the symmetric-antisymmetric gap.

• OSTI ID: 22398872
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 14 Vol. 106; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
CARRIER MOBILITY
COMPARATIVE EVALUATIONS
ELECTRONS
FABRICATION
GERMANIUM SILICIDES
HALL EFFECT
HETEROJUNCTIONS
LAYERS
MAGNETORESISTANCE
QUANTUM WELLS
SILICON
SYMMETRY