Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure

Laroche, Dominique; Huang, ShiHsien; Nielsen, Erik; Liu, Chee Wee; Li, Jiun -Yun; Lu, Tzu -Ming

doi:10.1063/1.4917296

Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure

Journal Article · Wed Apr 08 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4917296· OSTI ID:1235261

Laroche, Dominique ^[1]; Huang, ShiHsien ^[2]; Nielsen, Erik ^[1]; Liu, Chee Wee ^[2]; Li, Jiun -Yun ^[2]; Lu, Tzu -Ming ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
National Taiwan Univ., Taipei (Taiwan); National Nano Device Lab., Hsinchu (Taiwan)

We report the design, the fabrication, and the magneto-transport study of an electron bilayer system embedded in an undoped Si/SiGe double-quantum-well heterostructure. Additionally, the combined Hall densities (n _Hall ) ranging from 2.6 × 10¹⁰ cm^-2 to 2.7 × 10¹¹ cm^-2 were achieved, yielding a maximal combined Hall mobility (μ_Hall) of 7.7 × 10⁵ cm²/(V • s) at the highest density. Simultaneous electron population of both quantum wells is clearly observed through a Hall mobility drop as the Hall density is increased to n_Hall> 3.3 × 10¹⁰cm^-2, consistent with Schrödinger-Poisson simulations. Furthermore, the integer and fractional quantum Hall effects are observed in the device, and single-layer behavior is observed when both layers have comparable densities, either due to spontaneous interlayer coherence or to the symmetric-antisymmetric gap.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1235261

Alternate ID(s):: OSTI ID: 1420457
OSTI ID: 22398872

Report Number(s):: SAND--2015-2479J; 579779

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 14 Vol. 106; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

References (25)

A one-dimensional SiGe superlattice grown by UHV epitaxy Kasper, E.; Herzog, H. J.; Kibbel, H. Applied Physics, Vol. 8, Issue 3 https://doi.org/10.1007/BF00896611	journal	November 1975
Observation of intersubband scattering in a 2-dimensional electron system Störmer, H. L.; Gossard, A. C.; Wiegmann, W. Solid State Communications, Vol. 41, Issue 10 https://doi.org/10.1016/0038-1098(82)91121-8	journal	March 1982
Photoluminescence and magnetotransport of 2-D hole gases in Si/SiGe/Si heterostructures Apetz, R.; Loo, R.; Vescan, L. Solid-State Electronics, Vol. 37, Issue 4-6 https://doi.org/10.1016/0038-1101(94)90335-2	journal	April 1994
Design and fabrication of a SiGe double quantum well structure for g-factor tuning Malissa, H.; Gruber, D.; Pachinger, D. Superlattices and Microstructures, Vol. 39, Issue 5 https://doi.org/10.1016/j.spmi.2005.09.001	journal	May 2006
Exciton condensation and perfect Coulomb drag Nandi, D.; Finck, A. D. K.; Eisenstein, J. P. Nature, Vol. 488, Issue 7412 https://doi.org/10.1038/nature11302	journal	August 2012
Anisotropy of g-factor and electron spin resonance linewidth in modulation doped SiGe quantum wells Malissa, H.; Jantsch, W.; Mühlberger, M. Applied Physics Letters, Vol. 85, Issue 10 https://doi.org/10.1063/1.1788881	journal	September 2004
Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6×106 cm2/Vs Lu, T. M.; Tsui, D. C.; Lee, C. -H. Applied Physics Letters, Vol. 94, Issue 18 https://doi.org/10.1063/1.3127516	journal	May 2009
Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors Lu, T. M.; Lee, C. -H.; Huang, S. -H. Applied Physics Letters, Vol. 99, Issue 15 https://doi.org/10.1063/1.3652909	journal	October 2011
Mobility enhancement of strained Si by optimized SiGe/Si/SiGe structures Huang, S. -H.; Lu, T. -M.; Lu, S. -C. Applied Physics Letters, Vol. 101, Issue 4 https://doi.org/10.1063/1.4739513	journal	July 2012
High-mobility Si and Ge structures Schäffler, Friedrich Semiconductor Science and Technology, Vol. 12, Issue 12 https://doi.org/10.1088/0268-1242/12/12/001	journal	December 1997
Analysis of retrograded double quantum well p-type MOSFET Chretien, O.; Yousif, M. Y. A.; Nur, O. Semiconductor Science and Technology, Vol. 13, Issue 9 https://doi.org/10.1088/0268-1242/13/9/006	journal	September 1998
Integer quantum Hall states in coupled double electron gas systems at mismatched carrier densities Millard, I. S.; Patel, N. K.; Simmons, M. Y. Journal of Physics: Condensed Matter, Vol. 8, Issue 22 https://doi.org/10.1088/0953-8984/8/22/001	journal	May 1996
Fractional quantum Hall effect in bilayer two-dimensional hole-gas systems Hamilton, A. R.; Simmons, M. Y.; Bolton, F. M. Physical Review B, Vol. 54, Issue 8 https://doi.org/10.1103/PhysRevB.54.R5259	journal	August 1996
Quantum-Hall quantum bits Yang, S. -R. Eric; Schliemann, John; MacDonald, A. H. Physical Review B, Vol. 66, Issue 15 https://doi.org/10.1103/PhysRevB.66.153302	journal	October 2002
Evolution of the bilayer ν = 1 quantum Hall state under charge imbalance Clarke, W. R.; Micolich, A. P.; Hamilton, A. R. Physical Review B, Vol. 71, Issue 8 https://doi.org/10.1103/PhysRevB.71.081304	journal	February 2005
Valley splitting of Si ∕ Si 1 − x Ge x heterostructures in tilted magnetic fields Lai, K.; Lu, T. M.; Pan, W. Physical Review B, Vol. 73, Issue 16 https://doi.org/10.1103/PhysRevB.73.161301	journal	April 2006
Fractional quantum Hall effect of two-dimensional electrons in high-mobility Si/SiGe field-effect transistors Lu, T. M.; Pan, W.; Tsui, D. C. Physical Review B, Vol. 85, Issue 12 https://doi.org/10.1103/PhysRevB.85.121307	journal	March 2012
Evidence for a Finite-Temperature Phase Transition in a Bilayer Quantum Hall System Champagne, A. R.; Eisenstein, J. P.; Pfeiffer, L. N. Physical Review Letters, Vol. 100, Issue 9 https://doi.org/10.1103/PhysRevLett.100.096801	journal	March 2008
Magnetic-field-driven destruction of quantum Hall states in a double quantum well Boebinger, G. S.; Jiang, H. W.; Pfeiffer, L. N. Physical Review Letters, Vol. 64, Issue 15 https://doi.org/10.1103/PhysRevLett.64.1793	journal	April 1990
New fractional quantum Hall state in double-layer two-dimensional electron systems Eisenstein, J. P.; Boebinger, G. S.; Pfeiffer, L. N. Physical Review Letters, Vol. 68, Issue 9 https://doi.org/10.1103/PhysRevLett.68.1383	journal	March 1992
Role of Density Imbalance in an Interacting Bilayer Hole System Tutuc, E.; Melinte, S.; De Poortere, E. P. Physical Review Letters, Vol. 91, Issue 7 https://doi.org/10.1103/PhysRevLett.91.076802	journal	August 2003
Pseudospin Quantum Computation in Semiconductor Nanostructures Scarola, V. W.; Park, K.; Sarma, S. Das Physical Review Letters, Vol. 91, Issue 16 https://doi.org/10.1103/PhysRevLett.91.167903	journal	October 2003
Vanishing Hall Resistance at High Magnetic Field in a Double-Layer Two-Dimensional Electron System Kellogg, M.; Eisenstein, J. P.; Pfeiffer, L. N. Physical Review Letters, Vol. 93, Issue 3 https://doi.org/10.1103/PhysRevLett.93.036801	journal	July 2004
High-performance strained Si/SiGe pMOS devices with multiple quantum wells Collaert, N.; Verheyen, P.; De Meyer, K. IEEE Transactions on Nanotechnology, Vol. 1, Issue 4 https://doi.org/10.1109/TNANO.2002.807384	journal	December 2002
Hole Confinement and 1/ f Noise Characteristics of SiGe Double-Quantum-Well p-Type Metal–Oxide–Semiconductor Field-Effect Transistors Lin, Yu Min; Wu, San Lein; Chang, Shoou Jinn Japanese Journal of Applied Physics, Vol. 45, Issue 5A https://doi.org/10.1143/JJAP.45.4006	journal	May 2006

Similar Records

Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure

Journal Article · Mon Apr 06 00:00:00 EDT 2015 · Applied Physics Letters · OSTI ID:22398872

Density dependence of the excitation gaps in an undoped Si/SiGe double-quantum-well heterostructure

Journal Article · Sun Nov 28 23:00:00 EST 2021 · Applied Physics Letters · OSTI ID:1834119

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY

Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure

Citation Formats

References (25)

Similar Records

Related Subjects