Density dependence of the excitation gaps in an undoped Si/SiGe double-quantum-well heterostructure

Chen, D.; Cai, S.; Hsu, N. -W.; Huang, S. -H.; Chuang, Y.; Nielsen, E.; Li, J. -Y.; Liu, C. W.; Lu, T. M.; Laroche, D.

doi:10.1063/5.0068538

Density dependence of the excitation gaps in an undoped Si/SiGe double-quantum-well heterostructure

Journal Article · Sun Nov 28 23:00:00 EST 2021 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0068538· OSTI ID:1834119

Chen, D. ^[1]; Cai, S. ^[1]; Hsu, N. -W. ^[2]; Huang, S. -H. ^[2]; Chuang, Y. ^[2]; Nielsen, E. ^[3]; ^[4]; ^[2]; ^[3]; ^[1]

Univ. of Florida, Gainesville, FL (United States)
National Taiwan Univ., Taipei (Taiwan). Graduate Inst. of Electronic Engineering
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
National Taiwan Univ., Taipei (Taiwan). Graduate Inst. of Electronic Engineering; Taiwan Semiconductor Research Inst., Hsinchu (Taiwan)

In this work, we report low-temperature magneto-transport measurements of an undoped Si/SiGe asymmetric double quantum well heterostructure. The density in both layers is tuned independently utilizing top and bottom gates, allowing the investigation of quantum wells at both imbalanced and matched densities. Integer quantum Hall states at total filling factor v_T=1 and v_T=2 are observed in both density regimes, and the evolution of their excitation gaps is reported as a function of the density. The v_T=1 gap evolution departs from the behavior generally observed for valley splitting in the single layer regime. Furthermore, by comparing the v_T=2 gap to the single particle tunneling energy, Δ_SAS, obtained from Schrödinger–Poisson (SP) simulations, evidence for the onset of spontaneous interlayer coherence is observed for a relative filling fraction imbalance smaller than ~50%.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); Ministry of Science and Technology Taiwan (MOST)

Grant/Contract Number:: NA0003525

OSTI ID:: 1834119

Report Number(s):: SAND--2021-15149J; 702114

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 119; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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