High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)
- HexaTech, Inc., 991 Aviation Pkwy., Suite 800, Morrisville, North Carolina 27560 (United States)
The internal quantum efficiency (IQE) of Al{sub 0.55}Ga{sub 0.45}N/AlN and Al{sub 0.55}Ga{sub 0.45}N/Al{sub 0.85}Ga{sub 0.15}N UVC MQW structures was analyzed. The use of bulk AlN substrates enabled us to undoubtedly distinguish the effect of growth conditions, such as V/III ratio, on the optical quality of AlGaN based MQWs from the influence of dislocations. At a high V/III ratio, a record high IQE of ∼80% at a carrier density of 10{sup 18 }cm{sup −3} was achieved at ∼258 nm. The high IQE was correlated with the decrease of the non-radiative coefficient A and a reduction of midgap defect luminescence, all suggesting that, in addition to dislocations, point defects are another major factor that strongly influences optical quality of AlGaN MQW structures.
- OSTI ID:
- 22398850
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 14 Vol. 106; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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