Si concentration dependence of structural inhomogeneities in Si-doped Al{sub x}Ga{sub 1−x}N/Al{sub y}Ga{sub 1−y}N multiple quantum well structures (x = 0.6) and its relationship with internal quantum efficiency

Journal Article · Sun Dec 21 04:00:00 EST 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4904847· OSTI ID:22402831

Kurai, Satoshi; Anai, Koji; Yamada, Yoichi ^[1]; Miyake, Hideto; Hiramatsu, Kazumasa ^[2]

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1. Department of Material Science and Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611 (Japan)
2. Department of Electrical and Electronic Engineering, Mie University, 1577 Kurimamachiya, Tsu, Mie 514-8507 (Japan)

We investigated the distribution of luminescence in Si-doped Al{sub x}Ga{sub 1−x}N/Al{sub y}Ga{sub 1−y}N multiple quantum well (MQW) structures (x = 0.6) with different Si concentrations by cathodoluminescence (CL) mapping combined with scanning electron microscopy. The effects of surface morphology, dark spot density, and full width at half-maximum of spot CL spectra on internal quantum efficiency (IQE) were determined. A flat surface morphology and uniform CL map were observed for Si-doped AlGaN MQWs, in contrast to undoped AlGaN MQW and Si-doped AlGaN with relatively low Al content. The dark spot density in the Si-doped AlGaN MQWs increased exponentially as the Si concentration increased and did not explain the Si concentration dependence of IQE. In contrast, there was a clear correlation between the dark spot density and IQE of the AlGaN MQWs at a constant Si concentration. The emission energy distribution arising from the inhomogeneity of the relative Al content and the well layer thickness was estimated by monochromatic CL measurements, although there was almost no difference in the distribution for different Si concentrations. Therefore, the previously reported dependence of the defect complexes on Si concentration is reflected in the IQE of Si-doped AlGaN MQWs. Defect complexes composed of cation vacancies and impurities rather than dislocations and interfacial quality are the major contributor to the IQE of the Si-doped AlGaN MQWs with different Si concentrations.

• OSTI ID: 22402831
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 23 Vol. 116; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ABUNDANCE
CATHODOLUMINESCENCE
CATIONS
DISLOCATIONS
DOPED MATERIALS
ENERGY SPECTRA
IMPURITIES
LAYERS
MONOCHROMATIC RADIATION
MORPHOLOGY
QUANTUM EFFICIENCY
QUANTUM WELLS
SCANNING ELECTRON MICROSCOPY
SURFACES
THICKNESS
VACANCIES