Effects of high-temperature thermal annealing on the electronic properties of In-Ga-Zn oxide thin films

Journal Article · Sun Mar 15 04:00:00 EDT 2015 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

DOI:https://doi.org/10.1116/1.4908157· OSTI ID:22392164

Li, Qin; Song, Zhong Xiao; Ma, Fei; Xu, Ke Wei ^[1]

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1. State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China and Department of Physics and Opt-electronic Engineering, Xi'an University of Arts and Science, Xi'an, Shaanxi 710065 (China)

Indium gallium zinc oxide (IGZO) thin films were deposited by radio-frequency magnetron sputtering at room-temperature. Then, thermal annealing was conducted to improve the structural ordering. X-ray diffraction and high-resolution transmission electron microscopy demonstrated that the as-deposited IGZO thin films were amorphous and crystallization occurred at 800 and 950 °C. As a result of crystallization at high temperature, the carrier concentration and the Hall mobility of IGZO thin films were sharply increased, which could be ascribed to the increased oxygen vacancies and improved structural ordering of the thin films.

• OSTI ID: 22392164
• Journal Information: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films Journal Issue: 2 Vol. 33; ISSN 0734-2101; ISSN JVTAD6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTALLIZATION
DEPOSITS
MAGNETRONS
RADIOWAVE RADIATION
SPUTTERING
TEMPERATURE RANGE 1000-4000 K
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
ZINC OXIDES