High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

Journal Article · Wed Jan 28 04:00:00 EST 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4906619· OSTI ID:22413015

Lee, Ching-Ting; Lin, Yung-Hao; Lin, Jhong-Ham ^[1]

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1. Institute of Microelectronics, Department of Electrical Engineering, Research Center for Energy Technology and Strategy (RCETS), National Cheng Kung University, Tainan, Taiwan (China)

Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance g{sub m} change, threshold voltage V{sub T} change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature.

• OSTI ID: 22413015
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 117; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
ALUMINIUM OXIDES
CHARGE CARRIERS
COMPARATIVE EVALUATIONS
CONCENTRATION RATIO
ELECTRICAL PROPERTIES
ELECTRON MOBILITY
GALLIUM COMPOUNDS
LAYERS
THIN FILMS
TRANSISTORS
ZINC OXIDES