Effect of thermal annealing on the properties of transparent conductive In–Ga–Zn oxide thin films

Journal Article · Sat Mar 15 04:00:00 EDT 2014 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

DOI:https://doi.org/10.1116/1.4861352· OSTI ID:22258656

Li, Ling ^[1]; Fan, Lina; Li, Yanhuai; Song, Zhongxiao; Ma, Fei ^[2]; Liu, Chunliang ^[3]

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1. Key Laboratory of Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, Xi'an 710049, China and School of Information Science and Engineering, Shandong University, Jinan 250100 (China)
2. State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049 (China)
3. Key Laboratory of Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, Xi'an 710049 (China)

Amorphous In–Ga–Zn oxide (IGZO) thin films were prepared using radio frequency magnetron sputtering at room temperature. Upon thermal annealing at temperatures even up to 500 °C, the amorphous characteristics were still maintained, but the electronic properties could be considerably enhanced. This could be ascribed to the increased optical band gap and the increased oxygen vacancies, as corroborated by the microstructure characterizations. In addition, the surface became smoother upon thermal annealing, guaranteeing good interface contact between electrode and a-IGZO. The optical transmittance at 400–800 nm exceeded 90% for all samples. All in all, thermal annealing at appropriate temperatures is expected to improve the performances of relevant a-IGZO thin film transistors.

• OSTI ID: 22258656
• Journal Information: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films Journal Issue: 2 Vol. 32; ISSN 0734-2101; ISSN JVTAD6
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
ELECTRODES
GALLIUM OXIDES
INDIUM OXIDES
MAGNETRONS
MICROSTRUCTURE
OXYGEN
RADIOWAVE RADIATION
SPUTTERING
SURFACES
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
TRANSISTORS
VACANCIES
ZINC OXIDES