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Tailoring of absorption edge by thermal annealing in tin oxide thin films

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4915421· OSTI ID:22391740
 [1];  [2];  [3];  [4]; ;  [5]
  1. Advanced Materials Research Lab, Department of Basic and Applied Sciences, Punjabi University, Patiala-147002 Punjab (India)
  2. SSB UICET, Panjab University, Chandigarh-160014 (India)
  3. Department of Physics, Punjabi University, Patiala-147002, Punjab (India)
  4. Advanced Analysis Center, Korea Institute of Science and Technology, Seoul 136-791, S. Korea (Korea, Republic of)
  5. Pohang Accelerator Lab., San31, Hyojadong, Namgu, Pohang – 790 784, S. Korea (Korea, Republic of)
Tin oxide (SnO{sub 2}) thin films were deposited by radio-frequency (RF) magnetron sputtering on silicon and glass substrates in different oxygen-to-argon gas-flow ratio (O{sub 2}-to-Ar = 0%, 10%, 50%). All films were deposited at room temperature and fixed working pressures, 10 mTorr. The X-ray diffraction (XRD) measurement suggests that all films were crystalline in nature except film deposited in argon environment. Thin films were annealed in air at 200 °C, 400 °C and 600 °C for two hours. All films were highly transparent except the film deposited only in the argon environment. It was also observed that transparency was improved with annealing due to decrease in oxygen vacancies. Atomic force microscopy (AFM), results showed that the surface of all the films were highly flat and smooth. Blue shift was observed in the absorption edge with annealing temperature. It was also observed that there was not big change in the absorption edge with annealing for films deposited in 10% and 50% oxygen-to-argon gas-flow ratio.
OSTI ID:
22391740
Journal Information:
AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1661; ISSN APCPCS; ISSN 0094-243X
Country of Publication:
United States
Language:
English