Preparation and characterization of tin oxide films by ion-assisted deposition
- Korea Inst. of Science and Technology, Seoul (Korea, Republic of). Div. of Ceramics
- Yonsei Univ., Seoul (Korea, Republic of). Dept. of Ceramic Engineering
Undoped tin oxide films were grown on Si substrates by a reactive ion-assisted deposition technique in which oxygen ions were irradiated on depositing Sn particles. In order to investigate the oxidation from SnO to SnO{sub 2}, the effects of initial oxygen contents and heat treatment on the final crystalline structure of tin oxide films were thoroughly examined. Oxygen to Sn metal ratio (N{sub O}/N{sub Sn}) of as-deposited films were controlled from 1.1 to 1.9 by varying the relative arrival ratio ({Gamma}) of oxygen ion to Sn particle from 0.025 to 0.1. Heat treatment was carried out in two different ways; one was post vacuum-annealing at 400--600 C and the other was in-situ annealing 400--500 C. Crystalline structure of as-deposited tin oxide films at room temperature was amorphous. After post-annealing at 400 C, only SnO phase was found below N{sub O}/N{sub Sn} = 1.6 in x-ray diffract ion and crystalline structure of the films comprising higher oxygen contents still appeared to be amorphous. Even though the films still showed SnO phase until {Gamma}50 after 500 C post-annealing, however, mixed structures of SnO, SnO{sub 2}, and intermediate Sn{sub 2}O{sub 3}/Sn{sub 3}O{sub 4} were observed for the films {Gamma}75 and {Gamma}100 with higher oxygen contents. At 600 C annealing, perfect SnO{sub 2} phase was attained for the films having N{sub O}/N{sub Sn} = 1.9. On the other hand, pure polycrystalline SnO{sub 2} films could be obtained by in-situ annealing at low temperature. The values of N{sub O}/N{sub Sn} and the chemical shifts with the variation of oxidation were carefully determined by the comparison of Sn MNN and O KLL Auger transitions. Surface microstructure of deposited films was also analyzed using a scanning electron microscopy (SEM) and an atomic force microscope (AFM).
- OSTI ID:
- 549823
- Report Number(s):
- CONF-961202--; ISBN 1-55899-342-8
- Country of Publication:
- United States
- Language:
- English
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