Observation of spin-charge conversion in chemical-vapor-deposition-grown single-layer graphene
- Graduate School of Engineering Science, Osaka University, Toyonaka 560-8531 (Japan)
- Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8531 (Japan)
- Institute for Material Chemistry and Engineering, Kyushu University, Fukuoka 816-8508 (Japan)
Conversion of pure spin current to charge current in single-layer graphene (SLG) is investigated by using spin pumping. Large-area SLG grown by chemical vapor deposition is used for the conversion. Efficient spin accumulation in SLG by spin pumping enables observing an electromotive force produced by the inverse spin Hall effect (ISHE) of SLG. The spin Hall angle of SLG is estimated to be 6.1 × 10{sup −7}. The observed ISHE in SLG is ascribed to its non-negligible spin-orbit interaction in SLG.
- OSTI ID:
- 22350962
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 105; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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