Conversion of pure spin current to charge current in amorphous bismuth

Journal Article · Wed May 07 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4863377· OSTI ID:22273856

Emoto, H.; Ando, Y.; Shinjo, T.; Shikoh, E. ^[1]; Fuseya, Y. ^[2]

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1. Graduate School of Engineering, Osaka City University, Osaka 558-8585 (Japan)
2. Department of Applied Physics and Chemistry, The University of Electro-Communications, Tokyo 182-8585 (Japan)

Spin Hall angle and spin diffusion length in amorphous bismuth (Bi) are investigated by using conversion of a pure spin current to a charge current in a spin pumping technique. In Bi/Ni{sub 80}Fe{sub 20}/Si(100) sample, a clear direct current (DC) electromotive force due to the inverse spin Hall effect of the Bi layer is observed at room temperature under a ferromagnetic resonance condition of the Ni{sub 80}Fe{sub 20} layer. From the Bi thickness dependence of the DC electromotive force, the spin Hall angle and the spin diffusion length of the amorphous Bi film are estimated to be 0.02 and 8 nm, respectively.

• OSTI ID: 22273856
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMORPHOUS STATE
BISMUTH
DIFFUSION LENGTH
DIRECT CURRENT
ELECTROMOTIVE FORCE
FERROMAGNETIC RESONANCE
HALL EFFECT
INTERFACES
IRON ALLOYS
LAYERS
NICKEL BASE ALLOYS
SILICON
SPIN
TEMPERATURE RANGE 0273-0400 K
THIN FILMS