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Title: Hydrogen induced electric conduction in undoped ZnO and Ga-doped ZnO thin films: Creating native donors via reduction, hydrogen donors, and reactivating extrinsic donors

Abstract

The manner in which hydrogen atoms contribute to the electric conduction of undoped ZnO and Ga-doped ZnO (GZO) films was investigated. Hydrogen atoms were permeated into these films through annealing in an atmospheric H{sub 2} ambient. Because the creation of hydrogen donors competes with the thermal annihilation of native donors at elevated temperatures, improvements to electric conduction from the initial state can be observed when insulating ZnO films are used as samples. While the resistivity of conductive ZnO films increases when annealing them in a vacuum, the degree of increase is mitigated when they are annealed in H{sub 2}. Hydrogenation of ZnO crystals was evidenced by the appearance of OH absorption signals around a wavelength of 2700 nm in the optical transmittance spectra. The lowest resistivity that was achieved by H{sub 2} annealing was limited to 1–2 × 10{sup −2} Ω cm, which is one order of magnitude higher than that by native donors (2–3 × 10{sup −3} Ω cm). Hence, all native donors are converted to hydrogen donors. In contrast, GZO films that have resistivities yet to be improved become more conductive after annealing in H{sub 2} ambient, which is in the opposite direction of GZO films that become more resistive after vacuum annealing.more » Hydrogen atoms incorporated into GZO crystals should assist in reactivating Ga{sup 3+} donors.« less

Authors:
 [1]
  1. NTT Microsystem Integration Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198 (Japan)
Publication Date:
OSTI Identifier:
22318042
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
Additional Journal Information:
Journal Volume: 32; Journal Issue: 5; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0734-2101
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTALS; GALLIUM IONS; HYDROGEN; HYDROGENATION; THIN FILMS; ZINC OXIDES

Citation Formats

Akazawa, Housei, E-mail: akazawa.housei@lab.ntt.co.jp. Hydrogen induced electric conduction in undoped ZnO and Ga-doped ZnO thin films: Creating native donors via reduction, hydrogen donors, and reactivating extrinsic donors. United States: N. p., 2014. Web. doi:10.1116/1.4892777.
Akazawa, Housei, E-mail: akazawa.housei@lab.ntt.co.jp. Hydrogen induced electric conduction in undoped ZnO and Ga-doped ZnO thin films: Creating native donors via reduction, hydrogen donors, and reactivating extrinsic donors. United States. doi:10.1116/1.4892777.
Akazawa, Housei, E-mail: akazawa.housei@lab.ntt.co.jp. Mon . "Hydrogen induced electric conduction in undoped ZnO and Ga-doped ZnO thin films: Creating native donors via reduction, hydrogen donors, and reactivating extrinsic donors". United States. doi:10.1116/1.4892777.
@article{osti_22318042,
title = {Hydrogen induced electric conduction in undoped ZnO and Ga-doped ZnO thin films: Creating native donors via reduction, hydrogen donors, and reactivating extrinsic donors},
author = {Akazawa, Housei, E-mail: akazawa.housei@lab.ntt.co.jp},
abstractNote = {The manner in which hydrogen atoms contribute to the electric conduction of undoped ZnO and Ga-doped ZnO (GZO) films was investigated. Hydrogen atoms were permeated into these films through annealing in an atmospheric H{sub 2} ambient. Because the creation of hydrogen donors competes with the thermal annihilation of native donors at elevated temperatures, improvements to electric conduction from the initial state can be observed when insulating ZnO films are used as samples. While the resistivity of conductive ZnO films increases when annealing them in a vacuum, the degree of increase is mitigated when they are annealed in H{sub 2}. Hydrogenation of ZnO crystals was evidenced by the appearance of OH absorption signals around a wavelength of 2700 nm in the optical transmittance spectra. The lowest resistivity that was achieved by H{sub 2} annealing was limited to 1–2 × 10{sup −2} Ω cm, which is one order of magnitude higher than that by native donors (2–3 × 10{sup −3} Ω cm). Hence, all native donors are converted to hydrogen donors. In contrast, GZO films that have resistivities yet to be improved become more conductive after annealing in H{sub 2} ambient, which is in the opposite direction of GZO films that become more resistive after vacuum annealing. Hydrogen atoms incorporated into GZO crystals should assist in reactivating Ga{sup 3+} donors.},
doi = {10.1116/1.4892777},
journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
issn = {0734-2101},
number = 5,
volume = 32,
place = {United States},
year = {2014},
month = {9}
}