Electronic properties of H and D doped ZnO epitaxial films
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
ZnO epitaxial films grown by pulsed laser deposition in an ambient of H2 or D2 exhibit qualitatively different electronic properties compared to films grown in vacuum or O2, or bulk single crystals annealed in H2. These include temperature-independent resistivities of ~0.1 Ω-cm, carrier (electron) concentrations in the 1018 cm-3 range, mobilities of 20-40 cm2/V-sec, and negligible (a few meV) activation energies for conduction. These transport properties are consistent with H (D) forming an ultra-shallow donor or conduction band states not achievable by post-growth annealing in H2.
- Research Organization:
- Pacific Northwest National Laboratory (PNNL), Richland, WA (United States), Environmental Molecular Sciences Laboratory (EMSL)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-76RL01830
- OSTI ID:
- 934634
- Report Number(s):
- PNNL-SA--59567; 19394; KC0203020
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 92; ISSN APPLAB; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
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