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Title: Chemical solution deposition derived (001)-oriented epitaxial BiFeO{sub 3} thin films with robust ferroelectric properties using stoichiometric precursors (invited)

Abstract

Phase pure bismuth ferrite (BiFeO{sub 3}) thin films with (001)-oriented epitaxial structure are realized on lanthanum strontium manganite (La{sub 0.67}Sr{sub 0.33}MnO{sub 3}) buffered (001)-SrTiO{sub 3} substrates by chemical solution deposition. The annealing process is optimized such that a stoichiometric precursor can be used to accurately control the Bi:Fe ratio. Ferroelectric, dielectric, and resistive switching behaviours are investigated for 40 nm, 70 nm, and 150 nm BFO thin films. While the thinnest film (40 nm) shows very leaky loops, square and fully saturated polarization hysteresis loops are shown for the thicker films. The highest remanent polarization (2P{sub r} = 100 μC/cm{sup 2}) and relative dielectric constant (ε{sub r} = 613) are obtained in the 150 nm BFO thin film. High cycle fatigue tests show that the thick films are resistant to polarization fatigue. Piezoresponse force microscopy results show that the domain structure varies with thickness. Resistive switching and polarization mediated diode effects are also observed. These robust properties suggest that chemical solution deposition derived BiFeO{sub 3} thin films can offer a viable low cost alternative.

Authors:
; ;  [1]
  1. School of Materials Science and Engineering, The University of New South Wales, Sydney, New South Wales 2052 (Australia)
Publication Date:
OSTI Identifier:
22314640
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BISMUTH; DEPOSITION; DOMAIN STRUCTURE; EPITAXY; FATIGUE; FERRITES; FERROELECTRIC MATERIALS; MATHEMATICAL SOLUTIONS; PERMITTIVITY; POLARIZATION; PRECURSOR; STRONTIUM TITANATES; THIN FILMS

Citation Formats

Zhang, Qi, Valanoor, Nagarajan, and Standard, Owen, E-mail: o.standard@unsw.edu.au. Chemical solution deposition derived (001)-oriented epitaxial BiFeO{sub 3} thin films with robust ferroelectric properties using stoichiometric precursors (invited). United States: N. p., 2014. Web. doi:10.1063/1.4891311.
Zhang, Qi, Valanoor, Nagarajan, & Standard, Owen, E-mail: o.standard@unsw.edu.au. Chemical solution deposition derived (001)-oriented epitaxial BiFeO{sub 3} thin films with robust ferroelectric properties using stoichiometric precursors (invited). United States. doi:10.1063/1.4891311.
Zhang, Qi, Valanoor, Nagarajan, and Standard, Owen, E-mail: o.standard@unsw.edu.au. Thu . "Chemical solution deposition derived (001)-oriented epitaxial BiFeO{sub 3} thin films with robust ferroelectric properties using stoichiometric precursors (invited)". United States. doi:10.1063/1.4891311.
@article{osti_22314640,
title = {Chemical solution deposition derived (001)-oriented epitaxial BiFeO{sub 3} thin films with robust ferroelectric properties using stoichiometric precursors (invited)},
author = {Zhang, Qi and Valanoor, Nagarajan and Standard, Owen, E-mail: o.standard@unsw.edu.au},
abstractNote = {Phase pure bismuth ferrite (BiFeO{sub 3}) thin films with (001)-oriented epitaxial structure are realized on lanthanum strontium manganite (La{sub 0.67}Sr{sub 0.33}MnO{sub 3}) buffered (001)-SrTiO{sub 3} substrates by chemical solution deposition. The annealing process is optimized such that a stoichiometric precursor can be used to accurately control the Bi:Fe ratio. Ferroelectric, dielectric, and resistive switching behaviours are investigated for 40 nm, 70 nm, and 150 nm BFO thin films. While the thinnest film (40 nm) shows very leaky loops, square and fully saturated polarization hysteresis loops are shown for the thicker films. The highest remanent polarization (2P{sub r} = 100 μC/cm{sup 2}) and relative dielectric constant (ε{sub r} = 613) are obtained in the 150 nm BFO thin film. High cycle fatigue tests show that the thick films are resistant to polarization fatigue. Piezoresponse force microscopy results show that the domain structure varies with thickness. Resistive switching and polarization mediated diode effects are also observed. These robust properties suggest that chemical solution deposition derived BiFeO{sub 3} thin films can offer a viable low cost alternative.},
doi = {10.1063/1.4891311},
journal = {Journal of Applied Physics},
number = 6,
volume = 116,
place = {United States},
year = {Thu Aug 14 00:00:00 EDT 2014},
month = {Thu Aug 14 00:00:00 EDT 2014}
}
  • The integration of epitaxial BaTiO 3 films on silicon, combining c-orientation, surface flatness, and high ferroelectric polarization is of main interest towards its use in memory devices. This combination of properties has been only achieved so far by using yttria-stabilized zirconia buffer layers. Here, the all-perovskite BaTiO 3/LaNiO 3/SrTiO 3 heterostructure is grown monolithically on Si(001). The BaTiO 3 films are epitaxial and c-oriented and present low surface roughness and high remnant ferroelectric polarization around 6 μC/cm 2. Lastly, this result paves the way towards the fabrication of lead-free BaTiO 3 ferroelectric memories on silicon platforms.
  • Graphical abstract: The cross sections show a very dense structure in the (001)-oriented films (c,d), while an open columnar growth structure is observed in the case of the (110)-oriented films (a,b). The (110)-oriented PZT films show a significantly larger longitudinal piezoelectric coefficient (d33{sub ,f}), but smaller transverse piezoelectric coefficient (d31{sub ,f}) than the (001) oriented films. - Highlights: • We fabricate all-oxide, epitaxial piezoelectric PZT thin films on Si. • The orientation of the films can be controlled by changing the buffer layer stack. • The coherence of the in-plane orientation of the grains and grain boundaries affects the ferroelectricmore » properties. • Good cycling stability of the ferroelectric properties of (001)-oriented PZT thin films. The (110)-oriented PZT thin films show a larger d33{sub ,f} but smaller d31{sub ,f} than the (001)-oriented films. - Abstract: Epitaxial ferroelectric Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} (PZT) thin films were fabricated on silicon substrates using pulsed laser deposition. Depending on the buffer layers and perovskite oxide electrodes, epitaxial films with different orientations were grown. (110)-oriented PZT/SrRuO{sub 3} (and PZT/LaNiO{sub 3}) films were obtained on YSZ-buffered Si substrates, while (001)-oriented PZT/SrRuO{sub 3} (and PZT/LaNiO{sub 3}) were fabricated with an extra CeO{sub 2} buffer layer (CeO{sub 2}/YSZ/Si). There is no effect of the electrode material on the properties of the films. The initial remnant polarizations in the (001)-oriented films are higher than those of (110)-oriented films, but it increases to the value of the (001) films upon cycling. The longitudinal piezoelectric d33{sub ,f} coefficients of the (110) films are larger than those of the (001) films, whereas the transverse piezoelectric d31{sub ,f} coefficients in the (110)-films are less than those in the (001)-oriented films. The difference is ascribed to the lower density (connectivity between grains) of the former films.« less
  • We have grown epitaxial BiFeO{sub 3} thin films with smooth surfaces on (001), (101), and (111) SrTiO{sub 3} substrates using sputtering. Four-circle x-ray diffraction and cross-sectional transmission electron microscopy show that the BiFeO{sub 3} thin films have rhombohedral symmetry although small monoclinic distortions have not been ruled out. Stripe ferroelectric domains oriented perpendicular to the substrate miscut direction and free of impurity phase are observed in BiFeO{sub 3} on high miscut (4{sup o}) (001) SrTiO{sub 3}, which attributes to a relatively high value of remanent polarization ({approx}71 {micro}C/cm{sup 2}). Films grown on low miscut (0.8{sup o}) SrTiO{sub 3} have amore » small amount of impure phase {alpha}Fe{sub 2}O{sub 3} which contributes to lower the polarization values ({approx}63 {micro}C/cm{sup 2}). The BiFeO{sub 3} films grown on (101) and (111) SrTiO{sub 3} exhibited remanent polarizations of 86 and 98 {micro}C/cm{sup 2}, respectively.« less