Optimization of excess Bi doping to enhance ferroic orders of spin casted BiFeO{sub 3} thin film
Journal Article
·
· Journal of Applied Physics
- Department of Physics and Astrophysics, University of Delhi, Delhi (India)
- Department of Physics, Miranda Housea, University of Delhi, Delhi (India)
- Defence Metallurgical Research Laboratory, Hyderabad (India)
- Department of Electrical and Computer Engineering, College of Engineering, University of Texas at SanAntonio, San Antonio 78249 (United States)
Multiferroic Bismuth Ferrite (BiFeO{sub 3}) thin films with varying excess bismuth (Bi) concentration were grown by chemical solution deposition technique. Room temperature multiferroic properties (ferromagnetism, ferroelectricity, and piezoelectricity) of the deposited BiFeO{sub 3} thin films have been studied. High resolution X-ray diffraction and Raman spectroscopy studies reveal that the dominant phases formed in the prepared samples change continuously from a mixture of BiFeO{sub 3} and Fe{sub 2}O{sub 3} to pure BiFeO{sub 3} phase and, subsequently, to a mixture of BiFeO{sub 3} and Bi{sub 2}O{sub 3} with increase in the concentration of excess Bi from 0% to 15%. BiFeO{sub 3} thin films having low content (0% and 2%) of excess Bi showed the traces of ferromagnetic phase (γ-Fe{sub 2}O{sub 3}). Deterioration in ferroic properties of BiFeO{sub 3} thin films is also observed when prepared with higher content (15%) of excess Bi. Single-phased BiFeO{sub 3} thin film prepared with 5% excess Bi concentration exhibited the soft ferromagnetic hysteresis loops and ferroelectric characteristics with remnant polarization 4.2 μC/cm{sup 2} and saturation magnetization 11.66 emu/g. The switching of fine spontaneous domains with applied dc bias has been observed using piezoresponse force microscopy in BiFeO{sub 3} thin films having 5% excess Bi. The results are important to identify optimum excess Bi concentration needed for the formation of single phase BiFeO{sub 3} thin films exhibiting the improved multiferroic properties.
- OSTI ID:
- 22304020
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 23 Vol. 115; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BISMUTH COMPOUNDS
BISMUTH OXIDES
DEPOSITION
FERRITES
FERROELECTRIC MATERIALS
FERROMAGNETISM
HYSTERESIS
MAGNETIZATION
MICROSCOPY
PIEZOELECTRICITY
POLARIZATION
RAMAN SPECTROSCOPY
RESOLUTION
SATURATION
SPIN
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
X-RAY DIFFRACTION
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BISMUTH COMPOUNDS
BISMUTH OXIDES
DEPOSITION
FERRITES
FERROELECTRIC MATERIALS
FERROMAGNETISM
HYSTERESIS
MAGNETIZATION
MICROSCOPY
PIEZOELECTRICITY
POLARIZATION
RAMAN SPECTROSCOPY
RESOLUTION
SATURATION
SPIN
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
X-RAY DIFFRACTION