Modeling direct interband tunneling. I. Bulk semiconductors

Journal Article · Thu Aug 07 04:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4891527· OSTI ID:22314569

Pan, Andrew ^[1]; Chui, Chi On ^[1]

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1. Department of Electrical Engineering, University of California, Los Angeles, Los Angeles, California 90095 (United States)

Interband tunneling is frequently studied using the semiclassical Kane model, despite uncertainty about its validity. Revisiting the physical basis of this formula, we find that it neglects coupling to other bands and underestimates transverse tunneling. As a result, significant errors can arise at low and high fields for small and large gap materials, respectively. We derive a simple multiband tunneling model to correct these defects analytically without arbitrary parameters. Through extensive comparison with band structure and quantum transport calculations for bulk InGaAs, InAs, and InSb, we probe the accuracy of the Kane and multiband formulas and establish the superiority of the latter. We also show that the nonlocal average electric field should be used when applying either of these models to nonuniform potentials. Our findings are important for efficient analysis and simulation of bulk semiconductor devices involving tunneling.

• OSTI ID: 22314569
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 5 Vol. 116; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ACCURACY
COMPARATIVE EVALUATIONS
ELECTRIC FIELDS
GALLIUM ARSENIDES
INDIUM ANTIMONIDES
INDIUM ARSENIDES
SEMICLASSICAL APPROXIMATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SIMULATION
TUNNEL EFFECT