Modeling direct interband tunneling. II. Lower-dimensional structures

Journal Article · Thu Aug 07 04:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4891528· OSTI ID:22314570

Pan, Andrew ^[1]; Chui, Chi On ^[1]

---

1. Department of Electrical Engineering, University of California, Los Angeles, Los Angeles, California 90095 (United States)

We investigate the applicability of the two-band Hamiltonian and the widely used Kane analytical formula to interband tunneling along unconfined directions in nanostructures. Through comparisons with k·p and tight-binding calculations and quantum transport simulations, we find that the primary correction is the change in effective band gap. For both constant fields and realistic tunnel field-effect transistors, dimensionally consistent band gap scaling of the Kane formula allows analytical and numerical device simulations to approximate non-equilibrium Green's function current characteristics without arbitrary fitting. This allows efficient first-order calibration of semiclassical models for interband tunneling in nanodevices.

• OSTI ID: 22314570
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 5 Vol. 116; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CALIBRATION
COMPARATIVE EVALUATIONS
CORRECTIONS
CURRENTS
EQUIPMENT
FIELD EFFECT TRANSISTORS
HAMILTONIANS
NANOSTRUCTURES
SEMICLASSICAL APPROXIMATION
SIMULATION
TUNNEL EFFECT