Band structure effects in interband tunnel devices
Conference
·
· Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)
OSTI ID:7305783
- California Inst. of Tech., Pasadena (United States)
The authors report on a calculation of transport in InAs/GaSb/AlSb-based interband tunnel structures using a realistic band structure model. The results are compared with calculations using a two-band model which includes only the lowest conduction band and the light-hole band. They found that for device structures containing GaSb quantum wells, the inclusion of heavy-hole states can introduce additional transmission resonances and substantial hole-mixing effects. These effects are found to have a significant influence on the current-voltage characteristics of interband devices.
- OSTI ID:
- 7305783
- Report Number(s):
- CONF-910115--
- Conference Information:
- Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Journal Volume: 9:4
- Country of Publication:
- United States
- Language:
- English
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Thesis/Dissertation
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·
OSTI ID:7044966
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·
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·
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Related Subjects
36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
ALUMINIUM COMPOUNDS
ANTIMONIDES
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CALCULATION METHODS
CHARGED-PARTICLE TRANSPORT
ELECTRONIC STRUCTURE
GALLIUM ANTIMONIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
PNICTIDES
RADIATION TRANSPORT
TUNNEL EFFECT
360606* -- Other Materials-- Physical Properties-- (1992-)
ALUMINIUM COMPOUNDS
ANTIMONIDES
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CALCULATION METHODS
CHARGED-PARTICLE TRANSPORT
ELECTRONIC STRUCTURE
GALLIUM ANTIMONIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
PNICTIDES
RADIATION TRANSPORT
TUNNEL EFFECT