Voltage controlled biaxial strain in VO{sub 2} films grown on 0.72Pb(Mg{sub 1∕3}Nb{sub 2∕3})-0.28PbTiO{sub 3} crystals and its effect on the transition temperature

Journal Article · Mon Sep 01 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4894536· OSTI ID:22311352

Soni, R.; Kohlstedt, H. ^[1]

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1. Nanoelektronik, Technische Fakultät, Christian-Albrechts-Universität zu Kiel, Kiel 24143 (Germany)

Vanadium oxide thin films (VO{sub 2}) were deposited on 0.72Pb(Mg{sub 1∕3}Nb{sub 2∕3})-0.28PbTiO{sub 3} (PMN-PT) crystalline substrates using pulsed laser deposition method. Due to their huge piezoelectric coefficients in the order of 2500 pm/V, the PMN-PT substrates are used to impose additional amount of biaxial strain to the VO{sub 2} films by applying an external bias to the substrates. The influence of the biaxial strain on the transition temperature and on the conductive properties of the VO{sub 2} films is investigated in this work. Thus, a change in the biaxial strain of −0.8 × 10{sup −3} applied in the (110) plane of the rutile cell of the VO{sub 2} lowered the metal-to-insulator transition temperature by 1.35 °C.

• OSTI ID: 22311352
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 9 Vol. 105; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTALS
ELECTRIC POTENTIAL
ENERGY BEAM DEPOSITION
LASER RADIATION
LEAD COMPOUNDS
MAGNESIUM COMPOUNDS
METALS
NIOBIUM COMPOUNDS
PIEZOELECTRICITY
PULSED IRRADIATION
RUTILE
STRAINS
THIN FILMS
TITANATES
TRANSITION TEMPERATURE
VANADIUM OXIDES