Influence of piezoelectric strain on the Raman spectra of BiFeO3 films deposited on PMN-PT substrates
- TU Bergakademie Freiberg, Freiberg (Germany)
- Martin-Luther-Univ., Halle (Germany); Institute for Metallic Materials, Dresden (Germany); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Martin-Luther-Univ., Halle (Germany); Institute for Metallic Materials, Dresden (Germany)
In this study, BiFeO3 epitaxial thin films were deposited on piezoelectric 0.72Pb(Mg1/3Nb2/3)O3-0.28PbTiO3 (PMN-PT) substrates with a conductive buffer layer (La0.7Sr0.3MnO3 or SrRuO3) using pulsed laser deposition. The calibration of the strain values induced by the electric field applied on the piezoelectric PMN-PT substrates was realised using X-Ray diffraction measurements. The method of piezoelectrically induced strain allows to obtain a quantitative correlation between strain and the shift of the Raman-active phonons, ruling out the influence of extrinsic factors, such as growth conditions, crystalline quality of substrates, or film thickness. Using the Poisson number for BiFeO3 one can determine the volume change induced by strain, and therefore the Gr neisen parameters for specific phonon modes.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- AC05-00OR22725
- OSTI ID:
- 1238753
- Alternate ID(s):
- OSTI ID: 22492703
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 4 Vol. 108; ISSN APPLAB; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Ferroelastic domain identification in BiFeO3 crystals using Raman spectroscopy
|
journal | January 2019 |
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