Volmer–Weber InAs quantum dot formation on InP (113)B substrates under the surfactant effect of Sb

Journal Article · Mon Jul 21 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4891505· OSTI ID:22311159

Zhao, Yu; Bertru, Nicolas; Folliot, Hervé; Rohel, Tony ^[1]; Mauger, Samuel J. C.; Koenraad, Paul M. ^[2]

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1. Université Européenne de Bretagne, INSA, FOTON, UMR-CNRS 6082, 20 Avenue des Buttes de Coësmes, F-35708 Rennes Cedex 7 (France)
2. COBRA Inter-University Research Institute, Eindhoven University of Technology, P.O. Box 513, NL-5600MB Eindhoven (Netherlands)

We report on Sb surfactant growth of InAs nanostructures on GaAs{sub 0.51}Sb{sub 0.49} layers deposited on InP (001) and on (113)B oriented substrates. On the (001) orientation, the presence of Sb significantly favors the two-dimensional growth regime. Even after the deposition of 5 mono-layers of InAs, the epitaxial film remains flat and InAs/GaAs{sub 0.51}Sb{sub 0.49} type-II quantum wells are achieved. On (113)B substrates, same growth runs resulted in formation of high density InAs islands. Microscopic studies show that wetting layer is missing on (113)B substrates, and thus, a Volmer-Weber growth mode is concluded. These different behaviors are attributed to the surface energy changes induced by Sb atoms on surface.

• OSTI ID: 22311159
• Journal Information: Applied Physics Letters, Vol. 105, Issue 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ANTIMONY
ATOMS
BORON
DEPOSITION
EPITAXY
FILMS
GALLIUM ARSENIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
LAYERS
NANOSTRUCTURES
QUANTUM DOTS
QUANTUM WELLS
SUBSTRATES
SURFACE ENERGY
SURFACES
SURFACTANTS
TWO-DIMENSIONAL CALCULATIONS