Effects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ti/Al/Ni/Au gate electrodes

Journal Article · Mon Aug 25 04:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4894093· OSTI ID:22310982

Zhao, Jingtao; Lin, Zhaojun; Luan, Chongbiao; Zhou, Yang; Yang, Ming ^[1]; Lv, Yuanjie; Feng, Zhihong ^[2]

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1. School of Physics, Shandong University, Jinan 250100 (China)
2. National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051 (China)

In this study, we investigated the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with Ti/Al/Ni/Au gate electrodes using the measured capacitance-voltage, current-voltage characteristics, and micro-Raman spectroscopy. We found that the uneven distribution of the strain caused by the Schottky metals was a major factor that generates the polarization Coulomb field scattering in AlGaN/AlN/GaN HFETs, and after appropriate rapid thermal annealing (RTA) processes, the polarization Coulomb field scattering was greatly weakened and the two-dimensional electron gas electron mobility was improved. We also found that the Schottky barrier height and the DC characteristics of the devices became better after appropriate RTA. Of course, the electrical performances mentioned above became deteriorated after excessive annealing.

• OSTI ID: 22310982
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 8 Vol. 105; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
ALUMINIUM COMPOUNDS
ALUMINIUM NITRIDES
ANNEALING
CAPACITANCE
COULOMB FIELD
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
ELECTRON GAS
ELECTRON MOBILITY
FIELD EFFECT TRANSISTORS
GALLIUM NITRIDES
GOLD
NICKEL
POLARIZATION
RAMAN EFFECT
RAMAN SPECTROSCOPY
SCHOTTKY BARRIER DIODES
TITANIUM
TWO-DIMENSIONAL CALCULATIONS