Cubic AlGaN/GaN Hetero-Junction Field-Effect Transistors with Normally-on and Normally-off Characteristics

Journal Article · Mon Nov 01 04:00:00 EDT 2010 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3518285· OSTI ID:21428726

Tschumak, E ^[1]

---

1. University of Paderborn, Faculty of Science, Department of Physics, Warburger Strasse 100 D-33098 Paderborn (Germany)

The growth of cubic group III-nitrides is a direct way to eliminate polarization effects, which inherently limit the fabrication of normally-off hetero-junction field-effect transistors (HFETs) in GaN technology. HFET structures were fabricated of non-polar cubic AlGaN/GaN hetero layers grown by plasma assisted molecular beam epitaxy on free standing 3C-SiC (001). The electrical insulation of 3C-SiC was realized by Ar{sup +} implantation before c-AlGaN/GaN growth. HFETs with normally-off and normally-on characteristics were fabricated of cubic AlGaN/GaN. Capacitance-voltage characteristics of the gate contact were performed to detect the electron channel at the c-AlGaN/GaN hetero-interface.

• OSTI ID: 21428726
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1292; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
ALUMINIUM NITRIDES
ARGON IONS
CAPACITANCE
CARBIDES
CARBON COMPOUNDS
CHARGED PARTICLES
CRYSTAL GROWTH METHODS
CRYSTAL LATTICES
CRYSTAL STRUCTURE
CUBIC LATTICES
ELECTRICAL INSULATION
ELECTRICAL PROPERTIES
EPITAXY
FIELD EFFECT TRANSISTORS
GALLIUM COMPOUNDS
GALLIUM NITRIDES
HETEROJUNCTIONS
INTERFACES
IONS
LAYERS
MOLECULAR BEAM EPITAXY
NITRIDES
NITROGEN COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
POLARIZATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SILICON CARBIDES
SILICON COMPOUNDS
TRANSISTORS