Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors

Journal Article · Mon Jul 28 04:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4891258· OSTI ID:22308564

Luan, Chongbiao; Lin, Zhaojun; Zhao, Jingtao; Wang, Yutang ^[1]; Lv, Yuanjie ^[2]; Chen, Hong ^[3]; Wang, Zhanguo ^[4]

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1. School of Physics, Shandong University, Jinan 250100 (China)
2. National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051 (China)
3. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China)
4. Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

The theoretical model of the polarization Coulomb field scattering (PCF) caused by the polarization charge density variation at the AlGaN/AlN interface in strained AlGaN/AlN/GaN heterostructure field-effect transistors has been developed. And the theoretical values for the electron drift mobility, which were calculated using the Matthiessen's rule that includes PCF, piezoelectric scattering, polar optical-phonon scattering, and interface roughness scattering, are in good agreement with our experimental values. Therefore, the theoretical model for PCF has been confirmed.

• OSTI ID: 22308564
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 116; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
ALUMINIUM NITRIDES
CARRIER MOBILITY
CHARGE DENSITY
COULOMB FIELD
ELECTRON DRIFT
FIELD EFFECT TRANSISTORS
GALLIUM COMPOUNDS
GALLIUM NITRIDES
INTERFACES
MATTHIESSEN RULE
NITROGEN COMPOUNDS
PHONONS
PIEZOELECTRICITY
POLARIZATION
ROUGHNESS
SCATTERING
SIMULATION
STRAINS