Joint contributions of Ag ions and oxygen vacancies to conducting filament evolution of Ag/TaO{sub x}/Pt memory device
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China)
- Department of Materials Science, National University of Tainan, Tainan 700, Taiwan (China)
The electroforming and resistive switching behaviors in the Ag/TaO{sub x}/Pt trilayer structure are investigated under a continual change of temperatures between 300 K and 100 K to distinguish the contributions of Ag ions and oxygen vacancies in developing of conducting filaments. For either electroforming or resistive switching, a significantly higher forming/set voltages is needed as the device is operated at 100 K, as compared to that observed when operating at 300 K. The disparity in forming/set voltages of Ag/TaO{sub x}/Pt operating at 300 K and 100 K is attributed to the contribution of oxygen vacancies, in addition to Ag atoms, in formation of conducting filament at 100 K since the mobilities of oxygen vacancies and Ag ions become comparable at low temperature. The presence of oxygen vacancy segment in the conducting filament also modifies the reset current from a gradually descending behavior (at 300 K) to a sharp drop (at 100 K). Furthermore, the characteristic set voltage and reset current are irreversible as the operation temperature is brought from 100 K back to 300 K, indicating the critical role of filament constituents on the switching behaviors of Ag/oxide/Pt system.
- OSTI ID:
- 22308192
- Journal Information:
- Journal of Applied Physics, Vol. 116, Issue 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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